2021
DOI: 10.1109/jsen.2020.3029953
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Enhancement of Ammonia Gas Sensing Properties of GaAs-Based Schottky Diodes Using Ammonium Sulfide Surface Passivation

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Cited by 3 publications
(3 citation statements)
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“…In addition to element doping, constructing heterojunction nanostructures including nn, n-p, or Schottky-type [12,54,55,[105][106][107] between two different materials is a fascinating way of regulating the band structure and energy levels and then improving the sensor response and recovery.…”
Section: Heterojunctionmentioning
confidence: 99%
“…In addition to element doping, constructing heterojunction nanostructures including nn, n-p, or Schottky-type [12,54,55,[105][106][107] between two different materials is a fascinating way of regulating the band structure and energy levels and then improving the sensor response and recovery.…”
Section: Heterojunctionmentioning
confidence: 99%
“…They confirmed that the sensor has different responses for the same gas under different V GS . In a methanol atmosphere of 150 ppm at 100 °C, the sensitivity of the sensor is 1.95% at V GS =0 V. When V GS is 5 V and 13 V, the response of the sensor is 127.93% and 82.38%, respectively [50] Mahmoodnia et al demonstrated a GaAs-based Schottky junction gas sensor, and saturated ammonium sulfide solution was used to passivate the GaAs [53]. The barrier height of the GaAs gas sensor after passivation has changed from 0.688 eV to 0.758 eV.…”
Section: Resistor-type Gas Sensorsmentioning
confidence: 99%
“…At 150 °C, the responsivity of the passivated GaAs gas sensor to 600 ppm ammonia gas increased significantly from 26% to 63%. In addition, its response time and recovery time are also greatly reduced [53].…”
Section: Resistor-type Gas Sensorsmentioning
confidence: 99%