Enhancement of breakdown strength and electromigration reliability for cobalt lines lightly doped with boron

Tsai, Tsung-Che; Shih, I-Ting; Cheng, Yi-Lung; Chen, Giin-Shan; Fang, Jau–Shiung

doi:10.1016/j.matchemphys.2022.126136

Cited by 3 publications

(2 citation statements)

References 43 publications

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“…Faria et al indicated that CoB can form α-Co solid solution and Co 3 B when the B concentration is ≤25 atomic% [ 16 ]. For use as interconnecting materials, the formation of a Co 3 B compound should be avoided [ 17 ]. In order to further understand CoW and CoB alloys, this study investigated the electrical and reliability characteristics of CoW/SiO 2 and CoB/SiO 2 interconnects under thermal and electrical stress.…”

Section: Introductionmentioning

confidence: 99%

Comparison of CoW/SiO2 and CoB/SiO2 Interconnects from the Perspective of Electrical and Reliability Characteristics

et al. 2023

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As the feature size of integrated circuits has been scaled down to 10 nm, the rapid increase in the electrical resistance of copper (Cu) metallization has become a critical issue. To alleviate the resistance increases of Cu lines, co-sputtered CoW and CoB alloying metals were investigated as conductors and barriers in this study. Annealing CoM (M = W or B)/SiO2/p-Si structures reduced the resistivity of CoM alloys, removed sputtering-deposition-induced damage, and promoted adhesion. Additionally, both annealed CoW/SiO2 or CoB/SiO2 structures displayed a negligible Vfb shift from capacitance-voltage measurements under electrical stress, revealing an effective barrier capacity, which is attributed to the formation of MOx layers at the CoM/SiO2 interface. Based on the thermodynamics, the B2O3 layer tends to form more easily than the WOx layer. Hence, the annealed CoB/SiO2/p-Si MIS capacitor had a higher capacitance and a larger breakdown strength did than the annealed CoW/SiO2/p-Si MIS capacitor.

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Section: Introductionmentioning

confidence: 99%

Comparison of CoW/SiO2 and CoB/SiO2 Interconnects from the Perspective of Electrical and Reliability Characteristics

et al. 2023

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“…1,2 Copper has emerged as a popular metal for interconnections due to its low electrical resistivity, which enhances reliability by minimizing electromigration. 3 Despite its advantages, the resistivity of copper interconnects increases as interconnect dimension shrink during back-end-of-line (BEOL) scaling, leading to significant RC delay and power consumption issues. 4 The resistivity increase in copper interconnects remains a critical challenge for achieving higher RC performance during BEOL scaling.…”

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confidence: 99%

Electrodeposition of Ru on Nanoscale Trench Patterns

Kim,

Lee,

Seo

et al. 2024

ECS J. Solid State Sci. Technol.

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Ru deposition in advanced technology nodes can improve performance by providing low resistance in nanoscale features. In this study, we reported the electrochemical reactions of Ru3+ on an Ru surface using multi-cyclic voltammetry (CV) and behavior of additives during Ru electrodeposition using linear sweep voltammetry (LSV) and potentiostatic measurements. Disodium 3,3'-dithiobis(1-propanesulfonate) (SPS), polyvinylpyrrolidone (PVP), and a bromide ion (Br-) were added for bottom-up filling. We investigated the suppression behavior of PVP. The current density and the onset potential of suppressor breakdown were affected by the suppressor concentration. PVP interacted synergistically with Br- and showed additional suppression. PVP formed a suppressing layer with Br- after formation of a bromide layer. SPS could reduce roughness during electrodeposition of Ru. Based on these results, nano-trenches were filled with Ru using the optimized additive condition.

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Layer-by-layer deposition of breakdown-strengthened Co(Ni) films by modulating termination time over the redox replacement

Fang

Chen

Cheng

et al. 2023

Materials Chemistry and Physics

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Enhancement of breakdown strength and electromigration reliability for cobalt lines lightly doped with boron

Cited by 3 publications

References 43 publications

Comparison of CoW/SiO2 and CoB/SiO2 Interconnects from the Perspective of Electrical and Reliability Characteristics

Comparison of CoW/SiO2 and CoB/SiO2 Interconnects from the Perspective of Electrical and Reliability Characteristics

Electrodeposition of Ru on Nanoscale Trench Patterns

Layer-by-layer deposition of breakdown-strengthened Co(Ni) films by modulating termination time over the redox replacement

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