Enhancement of Breakdown Voltage in p-GaN Gate AlGaN/GaN HEMTs With a Stepped Hybrid GaN/AlN Buffer Layer

Wang, Yuan; Hu, Shengdong; Guo, Jingwei; Wu, Hao; Liu, Tao; Jiang, Jie

doi:10.1109/jeds.2022.3145797

Cited by 9 publications

(5 citation statements)

References 28 publications

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“…Consequently, the HBB-HEMTs hold considerable promise for power electronics applications because of their high BV and low R on, sp . [33][34][35][36][37][38][39]. The proposed HBB-HEMT devices exhibit a favora ance between BV and Ron, sp relative to these previously reported results.…”

Section: Breakdown Propertiessupporting

confidence: 49%

“…Figure 9. BV and the R on, sp for this work compared with other reported results[33][34][35][36][37][38][39].…”

mentioning

confidence: 52%

“…Due to the effective electric field modulation capability of the hybrid AlGaN back barrier, the proposed HBB-HEMT devices demonstrate significant advantages in achieving a high BV and low R on, sp . The performance of other reported GaN HEMT devices is included for comparison in Figure 9 [33][34][35][36][37][38][39]. The proposed HBB-HEMT devices exhibit a favorable balance between BV and R on, sp relative to these previously reported results.…”

Section: Breakdown Propertiesmentioning

confidence: 77%

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Design Optimization of an Enhanced-Mode GaN HEMT with Hybrid Back Barrier and Breakdown Voltage Prediction Based on Neural Networks

Tian,

Hu,

et al. 2024

Electronics

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To improve the breakdown voltage (BV), a GaN-based high-electron-mobility transistor with a hybrid AlGaN back barrier (HBB-HEMT) was proposed. The hybrid AlGaN back barrier was constructed using the Al0.25Ga0.75N region and Al0.1G0.9N region, each with a distinct Al composition. Simulation results of the HBB-HEMT demonstrated a breakdown voltage (1640 V) that was 212% higher than that of the conventional HEMT (Conv-HEMT) and a low on-resistance (0.4 mΩ·cm2). Ultimately, the device achieved a high Baliga’s figure of merit (7.3 GW/cm2) among reported devices of similar size. A back-propagation (BP) neural network-based prediction model was trained to predict BV for enhanced efficiency in subsequent work. The model was trained and calibrated, achieving a correlation coefficient (R) of 0.99 and a prediction accuracy of 95% on the test set. The results indicated that the BP neural network model using the Levenberg–Marquardt algorithm accurately predicted the forward breakdown voltage of the HBB-HEMT, underscoring the feasibility and significance of neural network models in designing GaN power devices.

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Section: Breakdown Propertiessupporting

confidence: 49%

“…Figure 9. BV and the R on, sp for this work compared with other reported results[33][34][35][36][37][38][39].…”

mentioning

confidence: 52%

Section: Breakdown Propertiesmentioning

confidence: 77%

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Design Optimization of an Enhanced-Mode GaN HEMT with Hybrid Back Barrier and Breakdown Voltage Prediction Based on Neural Networks

Tian,

Hu,

et al. 2024

Electronics

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“…[1][2][3] Owing to such excellent performance characteristics as high saturation current, high cutoff frequency, and large power handling capabilities, AlGaN/GaN high-electron mobility transistors (HEMTs) are promising candidates for next-generation microwave power amplifiers and high-voltage switches. [4][5][6][7][8] The conventional AlGaN/GaN HEMTs are the depletionmode (D-mode) devices with a negative threshold voltage (V th ). In practice, the enhancement-mode (E-mode) HEMTs provide a simplified solution for circuit designing and can combine with D-mode HEMTs to realize the integrated D/Emode digital circuits.…”

Section: Introductionmentioning

confidence: 99%

Fluorine-plasma treated AlGaN/GaN high electronic mobility transistors under off-state overdrive stress

et al. 2022

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The influences of off-state overdrive stress on the fluorine-plasma treated AlGaN/GaN high-electronic mobility transistors (HEMTs) are investigated. It is observed that the reverse leakage current between the gate and source decreases after the off-state stress, whereas that current between the gate and drain increases. By analyzing those changes of the reverse currents based on the Frenkel-Poole model, it is suggested that the ionization of fluorine ions occurs during the off-state stress. Furthermore, threshold voltage degradation is also observed after the off-state stress, but the degradations of AlGaN/GaN HEMTs treated with different F-plasma RF powers are different. By comparing the differences between those devices, we find that the F-ions incorporated in the GaN buffer layer play an important role in averting degradation. Lastly, suggestions to obtain a more stable fluorine-plasma treated AlGaN/GaN HEMT are put forwarded.

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“…However due to high electric field the electrons may be trapped in free surface state causing current collapse. 9,10 In further development of HEMT device, a field plate above gate smoothens the electric field distribution and reduces peak electric field that suppresses the current collapse. 11,12 Extending of the field plate gate towards drain can further uniformly distribute the electric field in the channel which leads to further improvement in Breakdown voltage (V B ), but scales-down the device Transconductance (Gm).…”

mentioning

confidence: 99%

Investigation on Fe-Doped AlGaN/GaN HEMT at 148 GHz Using E-FPL Technology for High-Frequency Communication Systems

V²,

Chander³

et al. 2023

ECS J. Solid State Sci. Technol.

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In this research work, design of the extended field plate length (E-FPL) t-gate with Fe-doped AlGaN buffer structure on the graded aluminum gallium nitride (AlGaN)/ gallium nitride (GaN) high electron mobility transistor (HEMT) is proposed. The gate length of 60 nm with an ExFPL up to 50 nm towards the drain shows remarkable improvement in breakdown voltage. Meanwhile, the drain current and transconductance is further improved by the Fe-doped AlGaN Buffer design. In radio frequency (RF) small signal analysis this device exhibits a peak current-gain cutoff frequency fT of 148 GHz. This device has improved transconductance of 24% with high frequency. It is highly compatible with military applications such as RF upstream transmitters, ship and aircraft communication transmitters and high-frequency radars (HFRs).

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Enhancement of Breakdown Voltage in p-GaN Gate AlGaN/GaN HEMTs With a Stepped Hybrid GaN/AlN Buffer Layer

Cited by 9 publications

References 28 publications

Design Optimization of an Enhanced-Mode GaN HEMT with Hybrid Back Barrier and Breakdown Voltage Prediction Based on Neural Networks

Design Optimization of an Enhanced-Mode GaN HEMT with Hybrid Back Barrier and Breakdown Voltage Prediction Based on Neural Networks

Fluorine-plasma treated AlGaN/GaN high electronic mobility transistors under off-state overdrive stress

Investigation on Fe-Doped AlGaN/GaN HEMT at 148 GHz Using E-FPL Technology for High-Frequency Communication Systems

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