Enhancement of c-axis texture of AlN films by substrate implantation

Chen, C.H.; Yeh, Jih-Hung; Hwang, Jung Min

doi:10.1016/j.nimb.2005.05.015

Cited by 3 publications

(1 citation statement)

References 17 publications

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“…Figure 6 shows the crystallite size as a function of the treatment time of unexposed and nitrided samples of the Al (2 0 0) reflection plane at 1 and 2 mbar pressures, respectively. At both pressures, the crystallite size increases with the increase in the nitriding time [24]. The increase in crystallite size with the processing time is due to the increase in adatom mobility, high strain energy or higher crystallinity of AlN thin layers [25].…”

Section: Crystallite Size Measurementsmentioning

confidence: 99%

Plasma characterization for nitridation of aluminium alloy using 50 Hz ac discharge

Shah

Ahmad

Zakaullah

et al. 2008

Plasma Devices and Operations

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A 50 Hz ac abnormal glow discharge is characterized as a function of filling pressure (1-4 mbar) using a Langmuir probe. It is found that electron temperature, electron density and electron energy distribution function decrease with the gas filling pressure. Nitriding of aluminum alloy (Al−Mg 2 −Si) is performed for various time durations (3, 6, 9 and 12 h) and pressures (1 and 2 mbar) by keeping the input power (100 W) and substrate temperature (250 • C) constant. To explore the surface properties induced by plasma, X-ray diffractometer, optical micrography, atomic force microscopy and Vickers micro-hardness tester diagnostic techniques are used. Results exhibit the formation of cubic aluminum nitride. A significant increase in surface hardness is observed when samples are exposed at 1 mbar pressure for 12 h of processing time. A rapid decrease in surface hardness values with the imposed load suggests the formation of a thin modified surface layer.

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Section: Crystallite Size Measurementsmentioning

confidence: 99%