2016
DOI: 10.1016/j.cplett.2016.07.049
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Enhancement of carbon nanotube FET performance via direct synthesis of poly (sodium 4-styrenesulfonate) in the transistor channel

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Cited by 11 publications
(9 citation statements)
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“…This process is possible on any kind of organic surface having available hydrogens for abstraction, including the already grafted chains, allowing for branched or even crosslinked polymer films. The method can be used for grafting polymers onto surfaces that are relatively inert, or otherwise hard to functionalize, such as polyethylene 57,58 , carbon nanotubes 59,60 , hexagonal boron nitride 61 , or graphene 62 . The technique was recently used to graft onto cellulose nanocrystals 63 , to improve the device capabilities of perovskite quantum wells 64 , and during the synthesis of metal-organic frameworks 65,66 .…”
Section: Self-initiated Photografting and Photopolymerizationmentioning
confidence: 99%
“…This process is possible on any kind of organic surface having available hydrogens for abstraction, including the already grafted chains, allowing for branched or even crosslinked polymer films. The method can be used for grafting polymers onto surfaces that are relatively inert, or otherwise hard to functionalize, such as polyethylene 57,58 , carbon nanotubes 59,60 , hexagonal boron nitride 61 , or graphene 62 . The technique was recently used to graft onto cellulose nanocrystals 63 , to improve the device capabilities of perovskite quantum wells 64 , and during the synthesis of metal-organic frameworks 65,66 .…”
Section: Self-initiated Photografting and Photopolymerizationmentioning
confidence: 99%
“…Conductive carbon nanotube/polymer composites also have other so-called technological properties, such as thermoelectric power generation or shape memory. Thus, embedded carbon nanotubes enabled the respective CNT/composite materials to be used as thermopiles [ 25 ], actuators [ 26 , 27 ], parts of field-effect transistors [ 28 , 29 ], etc.…”
Section: Introductionmentioning
confidence: 99%
“…However, currently this is hardly possible in mass production processes at the wafer level. Multiple productions steps like etching and plasma treatments favor the subsequent creation of defects [8][9][10][11][12], which have a large influence on the device performance [13,14]. Consequently, it is of great interest to know the impact of defects on the electronic structure and transport properties.…”
Section: Introductionmentioning
confidence: 99%