Enhancement of crystalline quality and solar-blind photodetection characteristics of ε-Ga₂O₃ films by introducing Zn impurity

Abstract

ε-Ga2O3 films with and without Zn impurity were epitaxial grown by metal organic chemical vapor deposition on c-plane sapphire substrate, and were then face-to-face annealed in oxygen atmosphere at 600...

A self-powered flexible UV photodetector based on an individual ZnO-amorphous Ga2O3 core–shell heterojunction microwire

“…The advantages of these wide-bandgap semiconductor UV photodetectors include their compact size, robust stability, and intrinsic visible blindness (the obviation of external optical filters). 8–12…”