Enhancement of Dopant Activation in B-Implanted Diamond by High-Temperature Annealing

Tsubouchi, Nobuteru; Ogura, Masahiko

doi:10.1143/jjap.47.7047

Cited by 19 publications

(10 citation statements)

References 22 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The atomic concentration ratio can be estimated from the peak area and the sensitivity factor of the atoms assigned from XPS (90, 91). Additionally, scanning tunneling microscopy (STM) (92), 11 B NMR (93, 94), secondary ion mass spectrometry (SIMS) (95), cathodoluminescence (95–98), and chemiluminescence (82, 99, 100) are also used for characterization of BDD thin films.…”

Section: Characterization Of Bdd Thin Filmsmentioning

confidence: 99%

Boron-doped diamond nano microelectrodes for biosensing and in vitro measurements

et al. 2011

View full text Add to dashboard Cite

Since the fabrication of the first diamond electrode in the mid 1980s, repid progress has been made on the development and application of this new type of electrode material. Boron-doped diamond (BDD) electrodes exhibit outstanding properties compared to oxygen-containing sp2 carbon electrodes. These properties make BDD electrodes an ideal choice for use in complex samples. In recent years, BDD microelectrodes have been applied to in vitro and in vivo measurements of biological molecules in animals, tissues and cells. This review will summarize recent progress in the development and applications of BDD electrodes in bio-sensing and in vitro measurements of biomolecules. In the first section, the methods for BDD nanocrystalline diamond film deposition and BDD microelectrodes preparation are described. This is followed by a description and discussion of several approaches for characterization of the BDD electrode surface structure, morphology, and electrochemical activity. Further, application of BDD microelectrodes for use in the in vitro analysis of norepinephrine (NE), serotonin (5-HT), nitric oxide (NO), histamine, and adenosine from tissues are summarized and finally some of the remaining challenges are discussed.

show abstract

Section: Characterization Of Bdd Thin Filmsmentioning

confidence: 99%

Boron-doped diamond nano microelectrodes for biosensing and in vitro measurements

et al. 2011

View full text Add to dashboard Cite

show abstract

“…They obtained a relatively low doping efficiency of 9% for B-doped diamonds with 5 Â 10 19 cm À3 concentration. [17,18] Recently, we investigated the electrical activation of heavily implanted B atoms with doping a concentration of 3.5 Â 10 19 cm À3 in diamond focusing on the temperatures during the implantation and postannealing. [19,20] In the previous articles, the temperature in implantation was investigated in two extreme temperatures of room temperature (RT) and 900 °C, and that in activation annealing was done from 1150 to 1450 °C.…”

Section: Introductionmentioning

confidence: 99%

Optimization of Activation Annealing Condition for Boron‐Implanted Diamond

Seki,

Kurashima,

Yoshihara

et al. 2023

Physica Status Solidi (a)

View full text Add to dashboard Cite

Impurity activation of dopants implanted in diamond is one of the crucial issues for device application of diamond. We introduce boron impurity atoms in diamond, which expectedly act as acceptor, by ion implantation technique and investigate the optimum annealing time for the effective dopant activation. The impurity doping is performed by boron ion implantation at multiple incident energies to obtain a uniform dopant concentration from surface to 350 nm depth followed by activation annealing at 1300 °C for 5 to 240 min. The electrical properties of specific resistance, carrier concentration, and conduction type are analyzed as a function of temperature from RT to 873 K. The estimated ionization energy is strongly dependent on the annealing time and asymptotically approaches to 0.3 eV, which is theoretically expected ionization energy of acceptor boron, with increasing annealing time. Shorter annealing time (≲120 min) does not sufficiently recover radiation damages caused by ion implantation forming deep levels, which act as irregular conduction. We consequently find optimum window of annealing time for effective dopant activation and suggest carrier transport mechanism depending on the annealing time.This article is protected by copyright. All rights reserved.

show abstract

“…One such challenge is the local doping of impurity elements into diamond. [9][10][11][12][13][14][15][16][17] In the fabrication of electric devices, ion implantation is carried out as an impurity doping technique. When highenergy ions are implanted into a semiconductor, radiation damage, such as amorphization, can result.…”

Section: Introductionmentioning

confidence: 99%

Boron ion implantation on femtosecond-laser-irradiated diamond surface

Okada¹,

Bando²,

Iwaasa³

et al. 2022

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

We investigated the effect of femtosecond-laser-induced surface modifications on ion incorporation into diamond crystals. The (001) surface of a diamond crystal was irradiated with femtosecond laser pulses. Boron ions were implanted on the laser-irradiated surface of two crystals: one at 600°C and the other at room temperature. The ion concentration along the depth of the crystal was measured with secondary ion mass spectroscopy. The concentration profile was parabolic, and in the deeper region after the peak, the ion concentration was higher in the irradiated area than in the nonirradiated area in both crystals. That is, the introduction of laser-induced surface modifications enhanced the ion migration along the depth direction. Transmission electron microscopy showed that the crystallinity of diamond was better in the crystal subjected to high-temperature implantation. These results support the idea that femtosecond-laser-induced surface modifications can enhance dopant incorporation into diamond while preserving the diamond’s crystallinity.

show abstract

Enhancement of Dopant Activation in B-Implanted Diamond by High-Temperature Annealing

Cited by 19 publications

References 22 publications

Boron-doped diamond nano microelectrodes for biosensing and in vitro measurements

Boron-doped diamond nano microelectrodes for biosensing and in vitro measurements

Optimization of Activation Annealing Condition for Boron‐Implanted Diamond

Boron ion implantation on femtosecond-laser-irradiated diamond surface

Contact Info

Product

Resources

About