Enhancement of electrical characteristics and reliability in crystallized ZrO2 gate dielectrics treated with in-situ atomic layer doping of nitrogen

Huang, J.; Huang, Li Hsuan; Tsai, Meng-Chen; Lee, Min-Hung; Chen, Miin Jang

doi:10.1016/j.apsusc.2014.03.039

Cited by 11 publications

(5 citation statements)

References 35 publications

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“…For the sample with 5 nm of Ti, current density increases moderately as the annealing temperature is raised. In any case, leakage current is in the order of 10 −4 A cm −2 at 1 V for all the FGAs (figure 6(b)), similar to those reported in previous works [30,33]. On the other hand, for the sample with 17 nm of Ti, the current density reaches a high value over 0.1 A cm −2 at 1 V after the FGA at 350 °C as can be observed in figure 6(c).…”

Section: Resultssupporting

confidence: 89%

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Scavenging effect on plasma oxidized Gd₂O₃grown by high pressure sputtering on Si and InP substrates

Pampillón

Feijoo

Andrés

et al. 2015

Semicond. Sci. Technol.

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In this work, we analyze the scavenging effect of titanium gates on metal-insulatorsemiconductor capacitors composed of gadolinium oxide as dielectric material deposited on Si and InP substrates. The Gd 2 O 3 film was grown by high pressure sputtering from a metallic target followed by an in situ plasma oxidation. The thickness of the Ti film was varied between 2.5 and 17 nm and was capped with a Pt layer. For the devices grown on Si, a layer of 5 nm of Ti decreases the capacitance equivalent thickness from 2.3 to 1.9 nm without compromising the leakage current (10 −4 A cm −2 at V gate = 1 V). Thinner Ti has little impact on device performance, while 17 nm of Ti produces excessive scavenging. For InP capacitors, the scavenging effect is also observed with a decrease in the capacitance equivalent thickness from 2.5 to 1.9 nm (or an increase in the accumulation capacitance after the annealing from ∼1.4 to ∼1.7-1.8 μF cm −2 ). The leakage current density remains under 10 −2 A cm −2 at V gate = 1.5 V. For these devices, a severe flatband voltage shift with frequency is observed. This can be explained by a very high interface trap state density (in the order of 10 13 -10 14 eV −1 cm −2 ).

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Section: Resultssupporting

confidence: 89%

“…D it degradation is even more noticeable for the sample with 17 nm of Ti after the FGA at 400 °C, suggesting again that excessive scavenging results in a defective interface. Other works have reported similar values of the D it using ZrO 2 [30], single crystalline Gd 2 O 3 [31] and polycrystalline Gd 2 O 3 with an amorphous GdSiO layer [32].…”

Section: Resultssupporting

confidence: 57%

Scavenging effect on plasma oxidized Gd₂O₃grown by high pressure sputtering on Si and InP substrates

Pampillón

Feijoo

Andrés

et al. 2015

Semicond. Sci. Technol.

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“…Zirconium dioxide, also known as zirconia (ZrO 2 ), is a material of utmost importance, that is widely used in various applications including: catalysis, , catalyst supports, , dielectric materials, , high-performance ceramic materials, , chemical sensors, , solid oxide fuel cells, − thermal barrier coatings, and biomedical implants. − It exhibits an n -type electrical conductivity , that originates from the existence of oxygen vacancy and zirconium interstitial defects. Because zirconium interstitial defects require a high formation energy compared to all other defects, , it can be assumed that only oxygen vacancies are responsible for the n -type conductivity.…”

Section: Introductionmentioning

confidence: 99%

Modification of Properties of Yttria Stabilized Zirconia Epitaxial Thin Films by Excimer Laser Annealing

Bayati

Molaei

Richmond

et al. 2014

ACS Appl. Mater. Interfaces

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This study focuses on the ultrafast improvement of surface wettability, electrical, and room temperature magnetic characteristics of cubic zirconia single crystalline thin films after laser annealing. The point defects generated by the laser treatment are envisaged to play a critical role in altering the above properties. Yttria stabilized zirconia (YSZ) thin films were epitaxially grown on Si(100) substrates by pulsed laser deposition technique and subsequently annealed by a KrF excimer laser beam (τ = 25 ns) using low-energy laser pulses. An atomically sharp interface, parallel to the film free surface, between laser annealed layer and the pristine region was observed. The single crystalline nature of thin films was preserved following the laser treatment. The laser-solid interaction with YSZ led to the introduction of point defects, i.e., oxygen vacancies, resulting in a strained structure which, in turn, resulted in the formation of a tetragonal-like zirconia. With the increase of number of laser pulses the laser treated films got highly disordered due to the high concentration of the point defects, while maintaining their crystalline nature. Although the surface of the pristine sample showed weak hydrophilic characteristics (contact angle ∼ 73°), the laser annealed samples exhibited significantly improved hydrophilic characteristics. It was found that there is an optimum number of laser pulses where the maximum hydrophilicity (contact angle ∼ 22°) is obtained. The carrier concentration in the sample with the highest hydrophilicity was determined to be higher by about 5 orders of magnitude compared to the pristine sample. This sample possessed the lowest electrical resistivity. The laser annealed YSZ epilayers showed a superior room-temperature ferromagnetic behavior, compared to the pristine samples. A 2-fold enhancement in the magnetization of the samples was observed following the laser treatment which is a clear demonstration of the key role of defects and their transient distribution throughout the lattice. All these observations were correlated with the formation of point defects due to the photon interaction with YSZ and absorption of energy of the KrF laser photons to produce defects.

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“…Hereby, reducing the film thickness or grain size or doping impurities such as Si, Ge and La [14,74,75] into the lattice had been exploited to decrease their stable temperatures. The tetragonal/cubic phase of ZrO 2 can be formed by post-metallization annealing (PMA) at a low temperature of 450 • C to provide a high gate oxide dielectric constant [76]. Ge-induced stable ZrO 2 crystals can be formed by co-evaporation of Ge and ZrO 2 or thermally diffused into ZrO 2 films by Ge substrates, thus stabilizing the high-k tetragonal phase [75,[77][78][79].…”

Section: Crystalline Zro 2 Dielectricmentioning

confidence: 99%

“…What is more, as a channel material, Ge has many advantages, such as higher carrier mobility than traditional Si and compatibility with the Si process. In addition, some research [76,80,81] has reported that nitriding can effectively passivate grain boundaries and reduce leakage current density. On the other hand, the thermal stability is enhanced through post-deposition annealing (PDA) treatment at 800 • C (Figure 8) and the hysteresis problem affecting the threshold voltage stability is reduced to the maximum extent.…”

Section: Crystalline Zro 2 Dielectricmentioning

confidence: 99%

Research Progress of High Dielectric Constant Zirconia-Based Materials for Gate Dielectric Application

et al. 2020

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The high dielectric constant ZrO2, as one of the most promising gate dielectric materials for next generation semiconductor device, is expected to be introduced as a new high k dielectric layer to replace the traditional SiO2 gate dielectric. The electrical properties of ZrO2 films prepared by various deposition methods and the main methods to improve their electrical properties are introduced, including doping of nonmetal elements, metal doping design of pseudo-binary alloy system, new stacking structure, coupling with organic materials and utilization of crystalline ZrO2 as well as optimization of low-temperature solution process. The applications of ZrO2 and its composite thin film materials in metal oxide semiconductor field effect transistor (MOSFET) and thin film transistors (TFTs) with low power consumption and high performance are prospected.

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Enhancement of electrical characteristics and reliability in crystallized ZrO2 gate dielectrics treated with in-situ atomic layer doping of nitrogen

Cited by 11 publications

References 35 publications

Scavenging effect on plasma oxidized Gd₂O₃grown by high pressure sputtering on Si and InP substrates

Scavenging effect on plasma oxidized Gd₂O₃grown by high pressure sputtering on Si and InP substrates

Modification of Properties of Yttria Stabilized Zirconia Epitaxial Thin Films by Excimer Laser Annealing

Research Progress of High Dielectric Constant Zirconia-Based Materials for Gate Dielectric Application

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Enhancement of electrical characteristics and reliability in crystallized ZrO2 gate dielectrics treated with in-situ atomic layer doping of nitrogen

Cited by 11 publications

References 35 publications

Scavenging effect on plasma oxidized Gd2O3grown by high pressure sputtering on Si and InP substrates

Scavenging effect on plasma oxidized Gd2O3grown by high pressure sputtering on Si and InP substrates

Modification of Properties of Yttria Stabilized Zirconia Epitaxial Thin Films by Excimer Laser Annealing

Research Progress of High Dielectric Constant Zirconia-Based Materials for Gate Dielectric Application

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Scavenging effect on plasma oxidized Gd₂O₃grown by high pressure sputtering on Si and InP substrates

Scavenging effect on plasma oxidized Gd₂O₃grown by high pressure sputtering on Si and InP substrates