Enhancement of electrical characteristics of SnGaO thin-film transistors via argon and oxygen plasma treatment

Lu, Yinli; Dai, Xiaochuang; Yang, Jianwen; Liu, Ying; Cao, Duo; Lin, Fangting; Liu, Feng

doi:10.1016/j.vacuum.2024.113208

Cited by 1 publication

(1 citation statement)

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“…Tin oxide (SnO 2 ) is an earth-abundant, environment-friendly, and wide band gap material. , In the bulk single crystalline state, it has been reported that the Hall mobility of SnO 2 can reach as high as 260 cm 2 /V·s . Therefore, SnO 2 is expected to be an attractive material for TFT application.…”

Section: Introductionmentioning

confidence: 99%

High-Performance Tin Oxide Thin-Film Transistors Realized by Codoping and Their Application in Logic Circuits

Zhang,

Wei,

Zhang

et al. 2024

ACS Appl. Mater. Interfaces

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Tin oxide is a promising channel material, offering the advantages of being low-cost and environmentally friendly and having a wide band gap. However, despite the high electron mobility of SnO 2 in bulk, the corresponding thin-film transistors (TFTs) generally exhibit moderate performance, hindering their widespread application. Herein, we proposed a codoping strategy to improve both the electrical property and the stability of SnO 2 TFTs. A comparative analysis between doped and undoped SnO 2 was conducted. It is observed that taking advantage of the difference in ionic radii between two dopants (indium and gallium) and the tin ions in the host lattice can effectively reduce impurityinduced strain. Additionally, we investigated the effect of codoping content on SnO 2 TFTs. The optimal codoped SnO 2 (TIGO) TFTs demonstrate high performance, featuring a field-effect mobility of 15.9 cm 2 /V•s, a threshold voltage of 0.2 V, a subthreshold swing of 0.5 V/decade, and an on-to-off current ratio of 2.2 × 10 7 . Furthermore, the devices show high stability under both positive and negative bias stress conditions with a small threshold voltage shift of 1.8 and −1.2 V, respectively. Utilizing the TIGO TFTs, we successfully constructed a resistor-loaded unipolar inverter with a high gain of 10.76. This study highlights the potential of codoped SnO 2 TFTs for advanced applications in electronic devices.

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Section: Introductionmentioning

confidence: 99%