1980
DOI: 10.1016/0038-1098(80)90439-1
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Enhancement of electrical conductivity in MgO due to lithium impurities

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Cited by 32 publications
(11 citation statements)
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“…[3][4][5] After oxidation at high temperatures, the resulting hole-trapped centers are responsible for the p-type semiconducting properties observed at temperatures not much higher than RT. 5 By analogy, Al 2 O 3 :Mg crystals are expected to serve as a p-type semiconductor.…”
mentioning
confidence: 99%
“…[3][4][5] After oxidation at high temperatures, the resulting hole-trapped centers are responsible for the p-type semiconducting properties observed at temperatures not much higher than RT. 5 By analogy, Al 2 O 3 :Mg crystals are expected to serve as a p-type semiconductor.…”
mentioning
confidence: 99%
“…At room temperature (RT) their electrical conductivities are 10 −18 and < 10 −20 (Ωcm) −1 , respectively [1,2,3]. Replacing the host cation with an aliovalent impurity should in principle result in either electron or hole conduction, although the presence of other impurities, which act as charge compensators, might hinder this effect.…”
Section: Introductionmentioning
confidence: 99%
“…In both systems hole-trapped centers are formed after oxidation at high temperatures. These centers are responsible for the electrical conductivity enhancement [3,4,5,6].…”
Section: Introductionmentioning
confidence: 99%
“…The good electrochemical properties of all nanocomposite electrodes were attributed to the following factors: the uniform distribution of active nanocrystallites in the matrix and the buffering effect of the various matrices, such as carbon and ceramics. Among the above matrices, the carbon matrix, having higher electrical conductivity [27][28][29], was better than the ceramic matrix because it facilitated better electrochemical reversibility of cobalt oxide-based electrodes.…”
Section: Resultsmentioning
confidence: 98%