Enhancement of electrical properties in polycrystalline BiFeO3 thin films

Abstract

Ferroelectric BiFeO3 thin films were grown on Pt∕TiO2∕SiO2∕Si substrates by pulsed-laser deposition. From the x-ray diffraction analysis, the BiFeO3 thin films consist of perovskite single phase, and the crystal structure shows the tetragonal structure with a space group P4mm. The BiFeO3 thin films show enhanced electrical properties with low leakage current density value of ∼10−4A∕cm2 at a maximum applied voltage of 31V. This enhanced electrical resistivity allowed the authors to obtain giant ferroelectric polarization values such as saturation polarizations of 110 and 166μC∕cm2 at room temperature and 80K, respectively.

Polarization-Induced Photovoltaic Effects in Nd-Doped BiFeO3Ferroelectric Thin Films

“…[1][2][3] Large remnant polarizations P r (above 60 μC/cm 2 ) have been reported for BFO films fabricated by various deposition methods. [4][5][6][7][8] Hence, BFO is expected to be a promising Pb-free ferroelectric material for realizing environment-friendly and highly-integrated ferroelectric random access memories (FeRAMs). 9,10) On the other hand, as serious problems for the industrial application of FeRAMs using BFO films, there are large leakage currents and large coercive fields E c (generally, 300-400 kV/cm) [4][5][6][7][8] .…”

Band gap and Schottky barrier heights of multiferroic BiFeO3

“…[11][12][13][14][15][16] It was found that the conductivity could be reduced by optimizing the growth procedures.…”

“…However, these films often show sizable electrical leakage currents. [11][12][13][14][15][16] These can mask measurements of the polarization loop and could short-circuit ferroelectric storage devices, so there have been extensive efforts to reduce the leakage currents. [14][15][16] It is therefore of interest to know the band gap of BiFeO 3 and its conduction mechanisms, in order to know if the leakage is intrinsic or extrinsic.…”

Micro-Raman Study of BiFeO3Thin Films Fabricated by Chemical Solution Deposition Using Different Bi/Fe Ratio Precursors

“…Recently, growth technique of BiFeO 3 thin films have gathered much attention because pulsed laser deposition (PLD) provided films with excellent ferroelectric properties compared to bulk samples [4,5]. Chemical solution deposition is another attractive candidate for low-cost and efficient growth of BiFeO 3 films [6].…”