“…Since there are no Co-related impurities contributing to the room temperature ferromagnetism in the Zn 1−x Co x O flakes, we believe that the observed ferromagnetism at room temperature is an intrinsic property of Co-doped ZnO flakes. The carrier-induced ferromagnetism [12,31,32] that is frequently reported in II-IV semiconductors as well as III-V semiconductor can be the other possible origin of ferromagnetism. In this mechanism, the free carrier concentration is vital to determine whether the material is paramagnetic or ferromagnetic.…”