Enhancement of hydrogen sensing performance of a GaN-based Schottky diode with a hydrogen peroxide surface treatment

Improved H2 detection performance of GaN sensor with Pt/Sulfide treatment of porous active layer prepared by metal electroless etching

“…10d for 30 ppm and 200 ppm. recovery times, respectively, however it's was measured for 10000 ppm H2 concentration [88].…”

A comprehensive review of gallium nitride (GaN)-based gas sensors and their dynamic responses

“…As such, they are suitable for utilization in conjunction with GaN materials to improve gas sensing performance. 14,39,130 To suppress surface leakage and enhance the stability of the device, numerous dielectrics—for example, NiO, 131 GaO x (AlGaO x ), 132,133 SiO 2 , 134 IrO 2 , 135 HfO 2 , 136 ZnO, 137 Ta 2 O 5 , 138 and Sc 2 O 3 39 —have been proposed to develop MOS-type sensors. Moreover, the results of experiments have shown that the trapping of hydrogen atoms is accompanied by oxygen atoms on the surface of the semiconductor.…”

Preparation and characterization of CNTs/CaCu3Ti4O12/silicone rubber composites with improved dielectric and mechanical properties

“…Many studies show that adding ceramic fillers (titanium dioxide 3 and barium titanate 4,5 ), or conductive fillers (carbon nanotubes 6,7 and graphene 8,9 ) to silicone rubber can effectively improve the dielectric constant of silicone rubber. Yang et al 10 prepared barium titanate (BT)/silicone rubber dielectric composites with a dielectric constant of 3.8 when the fraction of BT was 30 wt%.…”