2023
DOI: 10.36227/techrxiv.23634951
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Enhancement of InGaN Quantum Well Photoluminescence in a Tamm Metal/Porous-DBR micro-Cavity

Abstract: <p>Vertical cavity surface emitting lasers (VCSEL) are of great interest for photonic and telecom applications, however challenges in fabrication of efficient VSCEL GaN devices are yet to be resolved. In this work we present a study of micro-photoluminescence (PL) emission from a novel InGaN quantum well (QW) emitting structure with integrated micro-cavity, which can be used for VCSEL applications. The micro-cavity exhibiting Tamm plasmon optical states is formed by porous GaN distributed Bragg reflector… Show more

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