Enhancement of Luminous Power and Efficiency in InGaN/GaN–Light Emitting Diode using high-k dielectric material

Abstract

A novel high-k dielectric material is proposed for InGaN/GaN-LED to improve the performance. The proposed LED is analyzed and benchmarked with conventional LED using Technological Computer Aided Design (TCAD). The qualitative consistency of the optical characteristics of LED in this work has been observed that validate the TCAD simulation. Further, it is observed that proposed LED recorded higher luminous power and internal quantum efficiency (IQE) than that of conventional LED. At the injection current of 600 mA, the proposed and conventional LED yielded luminous power of 1600 mW and 1400 mW, respectively. Further, IQE of the proposed LED is higher than that of conventional LED by 12%. The improvement in the optical performance is attribute to high-k dielectric material induced additional electric field and radiative recombination rate. Thus, the proposed LED with high-k dielectric material is an outstanding device in lightning application.

Effect of p-GaN Layer and High-k Material in InGaN/GaN LED for Optical Performance Enhancement

“…Because of the current crowding effect, highly localized carrier density and heat are generated beneath the p-electrode, resulting in non-uniform light emission from InGaN/GaN LEDs [18]. Thirdly, a resistive layer is typically added to the LED layout to increase current spreading [19][20]. Foreseeing the boundaries that Threading Dislocations may impose on obtaining higher Internal Quantum E ciency (IQE) depends on determining the effectiveness of such localization mechanisms under key conditions, such as high current densities, high temperatures, and higher indium compositions.…”