Poor piezoelectric activity is often observed in BiFeO 3 ceramics due to its low resistivity and high coercive field, which easily results in the break down before the domains are switched. Here, we attained a high piezoelectricity using a series of bismuth ferrite ceramics substituted by rare earth elements and transition metal elements {e.g., Bi 0.925 La 0.05 A 0.025 FeO 3 , A: Sm, Yb, Ho, Y, Nd, Pr, Dy, Gd; Bi 0.925 La 0.05 Sm 0.025 Fe 0.95 M 0.05 O 3 , M: Sc, In, Al, Ga, Ni, Co} fabricated by the conventional solid-state method. The influences of site engineering (e.g., Bi site or Fe site) as well as the doped element types on their phase structure, microstructure, and electrical properties have been comparatively analyzed. The ions (e.g., A=Sm, Yb, Ho, and Y) substitution for Bi site is helpful to attain both a pure phase structure and a relatively good piezoelectricity (d 33 ≥40 pC/N) of BFO ceramics, while the ions substitutions for Fe site cannot suppress the formation of impurity phases and then result in the degraded electrical properties. Both XRD and backscattered electron images fully confirmed the existence of the impurity phases (Bi-rich and Fe-rich counterparts) in the ceramics doped by Ga. According to the related experiments, the piezoelectric properties of bismuth ferrite ceramics can be promoted by the site engineering as well as the optimization of the element types. This result will point out a way for us to promote the piezoelectric properties of bismuth ferrite ceramics through choosing both suitable doping elements and eliminating impurity phases.