Enhancement of near-infrared detectability from InGaZnO thin film transistor with MoS<sub>2</sub> light absorbing layer

Pak, Sang Woo; Chu, Dongil; Song, Da Ye; Lee, Seung Kyo

doi:10.1088/1361-6528/aa9054

Cited by 32 publications

(14 citation statements)

References 23 publications

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“…Another important parameter of a transistor is the specific detectivity. We refer to Eun Kyu Kim's method [9], assuming that shot noise from dark current is the main contribution in detection assessment, the detectivity( D* ) is given by the following equation:

D^{*} = \frac{R}{\sqrt{2 e I_{dark} / A}}

…”

Section: Resultsmentioning

confidence: 99%

“…To enhance the sensing ability of the IGZO device in the visible region, TFT with heterojunction structure is proposed. II–VI compounds are widely applied in optoelectronics for producing various radiation transistors, such as molybdenum disulphide (MoS 2 ) [9], lead sulphide (PbS) [10] and lead selenide (PbSe) [11]. Among the materials, PbS contributes to the advantages of high light absorption coefficient, simple amplifier circuit and good performance at room temperature [12].…”

Section: Introductionmentioning

confidence: 99%

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PbS/IGZO hybrid structure photo‐field‐effect transistor with high performance

Meng

Wang

Ming

et al. 2018

Micro & Nano Letters

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To optimise the performance of photo-field-effect transistor, a back-gate hybrid structure was developed. In this hybrid phototransistor, lead sulphide (PbS) thin film was prepared using physical vapour deposition as a photosensitive layer. Discontinuous and uniform PbS film was obtained by controlling the deposition rate and time of PbS powders. Amorphous indium gallium zinc oxide (IGZO) with high mobility was used as an active layer. In this work, The hybrid structure phototransistor shows an excellent performance: device mobility (μ) reach 8.7 cm 2 V −1 s −1 , and responsivity achieve 2.7 × 10 4 A/W in visible spectrum and 5.7 A/W in near-infrared spectrum, respectively. Furthermore, the transistor exhibits detectivity up to 2.79 × 10 13 cmHz 1/2 W −1. The device also exhibits characteristics of the ideal diode: the saturation current of the diode is as small as 0.422 nA, and the responsivity of diode is ∼0.74 A/W. Simplified manufacturing processes effectively reduce the cost of fabricated device and provide better device stability.

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D^{*} = \frac{R}{\sqrt{2 e I_{dark} / A}}

…”

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

PbS/IGZO hybrid structure photo‐field‐effect transistor with high performance

Meng

Wang

Ming

et al. 2018

Micro & Nano Letters

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“…[49] ). [21] A table comparing the NIR photoresponse performance with recently reported hybrid phototransistors based on oxide semiconductor channels is presented in Table S1, [20,21,26,[50][51][52] Supporting Information.…”

Section: +mentioning

confidence: 99%

Flexible and Air‐Stable Near‐Infrared Sensors Based on Solution‐Processed Inorganic–Organic Hybrid Phototransistors

Tang

et al. 2021

Adv Funct Materials

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Flexible and air-stable phototransistors are highly demanded for wearable nearinfrared (NIR) image sensors. However, advanced NIR sensors via low-cost, solution-based processes remained a challenge. Herein, high-performance inorganic-organic hybrid phototransistors are achieved based on solution processed n-type metal oxide/polymer semiconductor heterostructures of In 2 O 3 /poly{5,5′-bis[3,5-bis(thienyl)phenyl]-2,2′-bithiophene-3ethylesterthiophene]} (PTPBT-ET). The In 2 O 3 /PTPBT-ET hybrid phototransistor combines the advantages of both fast electron transport in In 2 O 3 and high photoresponse in PTPBT-ET, showing high saturation mobility of 7.1 cm 2 V −1 s −1 and large current on/off ratio of >10 7 . As a result, the phototransistor exhibits high performance towards NIR light sensing with a responsivity of 200 A W −1 , a specific detectivity of 1.2 × 10 13 Jones, and fast photoresponse with rise/ fall time of 5/120 ms. Remarkably, the hybrid phototransistor, without any passivation, demonstrates excellent electrical stability without performance degradation even after 160 days in air. A 10 × 10 phototransistor array is also enabled by virtue of the high device uniformity. Lastly, flexible In 2 O 3 /PTPBT-ET phototransistor on polyimide substrate is attained, exhibiting outstanding mechanical flexibility up to 1000 bending/releasing cycles at a bending radius of 5 mm. These achievements pave the way for constructing air-stable hybrid phototransistors for flexible NIR image sensor applications.

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“…Some pioneering works have demonstrated the important characteristics of phototransistor synapses through reasonable material selection and device structure design. Among them, the heterostructures formed by combining lightabsorption materials, such as two-dimensional materials, [14][15][16] perovskites, [6,[17][18][19][20] or organic semiconductors [21][22][23] with a transistor has been identified as one effective approach to realize high-performance phototransistor synapses. Despite the advances, there are still limitations in terms of complex device architectures, rigorous processing conditions and incompatibility with current semiconductor manufacturing technology.…”

Section: Introductionmentioning

confidence: 99%

Ultralow Light‐Power Consuming Photonic Synapses Based on Ultrasensitive Perovskite/Indium‐Gallium‐Zinc‐Oxide Heterojunction Phototransistors

Cao

Sha

Bai

et al. 2021

Adv Elect Materials

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The brain‐inspired neuromorphic parallel computing has become one of the most promising technologies for efficient information processing by overcoming the von Neumann bottleneck of sequential operations. Synapses transmit information among neurons and act as the basic component in neuromorphic computing platforms. Despite the rapid advances in developing artificial synapses, most synaptic devices function electronically and thus numerous merits for photonics such as visual/imaging information processing, less corsstalk, and fast response, have to be compromised. Herein, a light‐stimulated synaptic device (photonic synapses) based on perovskite/In‐Ga‐Zn‐O heterojunction phototransistor is reported. The combination of high‐efficiency light absorber, high‐mobility channel, and heterojunction device architecture leads to efficient photon‐to‐electron conversion and intrinsic high‐gain mechanism for such light‐stimulated synapses. As a result, high performance photonic synapses are obtained with the basic functions of excitatory postsynaptic current (EPSC), paired‐pulse facilitation (PPF), and short‐term memory to long‐term memory conversion (STM‐LTM). Importantly, owing to the ultrasensitive photodetection characteristics, the light power consumption of such photonic artificial synapse can be as low as 2.6 picojoule. This study proposes a simple, efficient, and industry‐compatible device concept providing the photosensitive synapses for photonic neural networks by combining the merits of appropriate materials and device architecture.

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Enhancement of near-infrared detectability from InGaZnO thin film transistor with MoS₂ light absorbing layer

Cited by 32 publications

References 23 publications

PbS/IGZO hybrid structure photo‐field‐effect transistor with high performance

PbS/IGZO hybrid structure photo‐field‐effect transistor with high performance

Flexible and Air‐Stable Near‐Infrared Sensors Based on Solution‐Processed Inorganic–Organic Hybrid Phototransistors

Ultralow Light‐Power Consuming Photonic Synapses Based on Ultrasensitive Perovskite/Indium‐Gallium‐Zinc‐Oxide Heterojunction Phototransistors

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Enhancement of near-infrared detectability from InGaZnO thin film transistor with MoS2 light absorbing layer

Cited by 32 publications

References 23 publications

PbS/IGZO hybrid structure photo‐field‐effect transistor with high performance

PbS/IGZO hybrid structure photo‐field‐effect transistor with high performance

Flexible and Air‐Stable Near‐Infrared Sensors Based on Solution‐Processed Inorganic–Organic Hybrid Phototransistors

Ultralow Light‐Power Consuming Photonic Synapses Based on Ultrasensitive Perovskite/Indium‐Gallium‐Zinc‐Oxide Heterojunction Phototransistors

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Enhancement of near-infrared detectability from InGaZnO thin film transistor with MoS₂ light absorbing layer