Enhancement of near-infrared response of InGaAs photocathode through interaction of 1064 nm light with activated surface

Wang, Ziheng; Zhang, Yijun; Li, Shiman; Tang, Shengqiang; Zhang, Junju; Qian, Yunsheng; Shi, Feng; Jiao, Gangcheng; Cheng, Hongchang; Zeng, Yu

doi:10.1016/j.apsusc.2023.156760

Cited by 3 publications

(1 citation statement)

References 31 publications

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“…In addition, doping is a helpful step for the formation of the NEA photocathode, and can also be used to guide the In x Ga 1−x As material growth for the photocathode [ 26 ]. Moreover, the NEA activation procedure, in which cesium and oxygen adsorption are alternately supplied on the photocathode surface, can make the surface vacuum level of the NEA photocathodes lower than the conduction band minimum (CBM) of the bulk and result in a high QE [ 27 , 28 ]. Aside from the QE, the response time also plays a significant role in the photoemission process, and has attracted great interest in recent years.…”

Section: Introductionmentioning

confidence: 99%

Theoretical Study on the Photoemission Performance of a Transmission Mode In0.15Ga0.85As Photocathode in the Near-Infrared Region

et al. 2023

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Benefiting from a high quantum efficiency, low thermal emittance, and large absorption coefficient, InxGa1−xAs is an excellent group III–V compound for negative electron affinity (NEA) photocathodes. As the emission layer, InxGa1−xAs, where x = 0.15, has the optimal performance for detection in the near-infrared (NIR) region. Herein, an NEA In0.15Ga0.85As photocathode with Al0.63Ga0.37As as the buffer layer is designed in the form of a transmission mode module. The electronic band structures and optical properties of In0.15Ga0.85As and Al0.63Ga0.37As are calculated based on density functional theory. The time response characteristics of the In0.15Ga0.85As photocathode have been fully investigated by changing the photoelectron diffusion coefficient, the interface recombination velocity, and the thickness of the emission layer. Our results demonstrate that the response time of the In0.15Ga0.85As photocathode can be reduced to 6.1 ps with an incident wavelength of 1064 nm. The quantum efficiency of the In0.15Ga0.85As photocathode is simulated by taking into account multilayer optical thin film theory. The results indicate that a high quantum efficiency can be obtained by parameter optimization of the emission layer. This paper provides significant theoretical support for the applications of semiconductor photocathodes in the near-infrared region, especially for the study of ultrafast responses in the photoemission process.

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Section: Introductionmentioning

confidence: 99%

Theoretical Study on the Photoemission Performance of a Transmission Mode In0.15Ga0.85As Photocathode in the Near-Infrared Region

et al. 2023

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Insights into performance enhancement mechanism of GaAs(100) photocathode by Cs/Li/O and Cs/Li/NF3 co-deposition

Zhang,

Zhang

et al. 2024

Surfaces and Interfaces

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Enhanced blue-green response of nanoarray AlGaAs photocathodes for underwater low-light detection

Li¹,

Zhang²,

Wang³

et al. 2023

Opt. Express

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Underwater optical communication and low-light detection are usually realized via blue-green laser sources and blue-green light-sensitive detectors. Negative-electron-affinity AlGaAs photocathode is an ideal photosensitive material for ocean exploration due to its adjustable spectrum range, long working lifetime, and easy epitaxy of materials. However, compared with other photocathodes, the main problem of AlGaAs photocathode is its low quantum efficiency. Based on Spicer’s three-step photoemission model, nanoarray structures are designed on the surface of AlGaAs photocathode to improve its quantum efficiency from two aspects of optical absorption and photoelectron transport. Through simulation, it is concluded that the cylinder with diameter of 120 nm and height of 600 nm is the best nanoarray structure, and its absorptance is always greater than 90% in the 445∼532 nm range. Moreover, the absorptance and quantum efficiency of the cylinder nanoarray AlGaAs photocathode are less affected by the incident angle. When the angle of incident light reaches 70°, the minimum absorptance and quantum efficiency are still 64.6% and 24.9%. In addition, the square or hexagonal arrangement pattern of the nanoarray has little effect on the absorptance, however, a reduction in the overall emission layer thickness will decrease the absorptance near 532 nm.

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Enhancement of near-infrared response of InGaAs photocathode through interaction of 1064 nm light with activated surface

Cited by 3 publications

References 31 publications

Theoretical Study on the Photoemission Performance of a Transmission Mode In0.15Ga0.85As Photocathode in the Near-Infrared Region

Theoretical Study on the Photoemission Performance of a Transmission Mode In0.15Ga0.85As Photocathode in the Near-Infrared Region

Insights into performance enhancement mechanism of GaAs(100) photocathode by Cs/Li/O and Cs/Li/NF3 co-deposition

Enhanced blue-green response of nanoarray AlGaAs photocathodes for underwater low-light detection

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