2021
DOI: 10.1016/j.spmi.2020.106790
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Enhancement of optoelectronic properties of ZnO thin films by Al doping for photodetector applications

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Cited by 144 publications
(65 citation statements)
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“…However, a key issue with pristine ZnO (also with most wide-band-gap metal oxides) is that it can work for ultraviolet (UV) photodetection, as allowed by its wide-band-gap structure, while many areas require a photosensor which can detect visible light. Several past research works stated that doping of various transition metals in ZnO can tune its optical and optoelectronic properties. , The doping of cations like Al 3+ , Cu 2+ , Cu + , Ga 3+ , In + , Ag + , Mg 2+ , Mn 2+ , Ni 2+ , Co 2+ , Eu 3+ , and Tb 3+ effectively modify the electro-optical, morphological, magnetic, and chemical properties of ZnO-based thin films. Due to its advantageous characteristics, including low cost, natural abundance, high conductivity, and outstanding luminescence activation in II–VI compounds, copper is an efficient dopant which creates the p-type ZnO semiconductor. Also, the doping of copper forms deep acceptor states (electron traps) within the ZnO, which increases the electrical resistivity of the ZnO thin films . The increase in resistivity reduces the background carrier concentration, lowers the dark current, and hence improves the photosensitivity of ZnO-based photodetectors (η = I photo – I dark / I dark ). , …”
Section: Introductionmentioning
confidence: 99%
“…However, a key issue with pristine ZnO (also with most wide-band-gap metal oxides) is that it can work for ultraviolet (UV) photodetection, as allowed by its wide-band-gap structure, while many areas require a photosensor which can detect visible light. Several past research works stated that doping of various transition metals in ZnO can tune its optical and optoelectronic properties. , The doping of cations like Al 3+ , Cu 2+ , Cu + , Ga 3+ , In + , Ag + , Mg 2+ , Mn 2+ , Ni 2+ , Co 2+ , Eu 3+ , and Tb 3+ effectively modify the electro-optical, morphological, magnetic, and chemical properties of ZnO-based thin films. Due to its advantageous characteristics, including low cost, natural abundance, high conductivity, and outstanding luminescence activation in II–VI compounds, copper is an efficient dopant which creates the p-type ZnO semiconductor. Also, the doping of copper forms deep acceptor states (electron traps) within the ZnO, which increases the electrical resistivity of the ZnO thin films . The increase in resistivity reduces the background carrier concentration, lowers the dark current, and hence improves the photosensitivity of ZnO-based photodetectors (η = I photo – I dark / I dark ). , …”
Section: Introductionmentioning
confidence: 99%
“…18 Apart from these, the basic structural and morphological properties of the produced materials can be kept under control by adjusting the film growth conditions, so that the grown films gain the necessary functionality for certain applications. 19,20 In addition, there are some studies in the literature on the production of ZnO nanorods by the spray pyrolysis method. [21][22][23][24] The doping operation takes place in the form of the substitution of the doping ions with Zn 2+ ions which are in the ZnO crystal.…”
Section: Introductionmentioning
confidence: 99%
“…Its advantages are that it is low cost, fast, simple, and does not require a vacuum 18 . Apart from these, the basic structural and morphological properties of the produced materials can be kept under control by adjusting the film growth conditions, so that the grown films gain the necessary functionality for certain applications 19,20 . In addition, there are some studies in the literature on the production of ZnO nanorods by the spray pyrolysis method 21–24 …”
Section: Introductionmentioning
confidence: 99%
“…These elements present excellent physicochemical properties based on the electronic transitions occurring within the 4f energy shell [ 16 ]. As a result, their high conductivity, magnetic, electrochemical, and luminescent properties enabled their effective use as photocatalysts [ 17 ], photodetectors [ 18 ], Schottky diodes [ 19 ], and UV detectors [ 20 ], to cite only a few. Moreover, rare-earth compounds have been proved as promising candidates for improving gas sensing performance owing to their catalytic nature, fast oxygen ion mobility, and high surface basicity [ 21 , 22 ].…”
Section: Introductionmentioning
confidence: 99%