“…However, a key issue with pristine ZnO (also with most wide-band-gap metal oxides) is that it can work for ultraviolet (UV) photodetection, as allowed by its wide-band-gap structure, while many areas require a photosensor which can detect visible light. Several past research works stated that doping of various transition metals in ZnO can tune its optical and optoelectronic properties. , The doping of cations like Al 3+ , Cu 2+ , Cu + , Ga 3+ , In + , Ag + , Mg 2+ , Mn 2+ , Ni 2+ , Co 2+ , Eu 3+ , and Tb 3+ effectively modify the electro-optical, morphological, magnetic, and chemical properties of ZnO-based thin films. – Due to its advantageous characteristics, including low cost, natural abundance, high conductivity, and outstanding luminescence activation in II–VI compounds, copper is an efficient dopant which creates the p-type ZnO semiconductor. – Also, the doping of copper forms deep acceptor states (electron traps) within the ZnO, which increases the electrical resistivity of the ZnO thin films . The increase in resistivity reduces the background carrier concentration, lowers the dark current, and hence improves the photosensitivity of ZnO-based photodetectors (η = I photo – I dark / I dark ). , …”