Enhancement of output power in spin torque nano-oscillator using heterogeneous layer

Bhoomeeswaran, H.; Sabareesan, P.

doi:10.1063/1.4948163

Cited by 7 publications

(3 citation statements)

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“…The incoming spin-polarized current magnitude must be large, interacting with the apex layer magnetization through STT. Therefore, it produces a sustained oscillation in the oscillating free layer, leading to high frequency and PSD [7]. By choosing β = 60 o & θ = 90 o with the CIOF strength as Hoe = 50 kA/m, the maximum frequency of 77.5 GHz is obtained along with the PSD of 1.3 μW/mA 2 /GHz.…”

Section: Device and Its Dynamical Equationmentioning

confidence: 99%

“…Due to its less understanding, the effect of the CIOF in STNO is negated [20]. Based on his ideas, we published some works by considering the CIOF and tuned the device frequency of the STNO device [5,6]. Both the macro spin model does frequency tunability of the STNO device [MATLAB] and the micro spin model [OOMMF] [8] as separate work.…”

Section: Introductionmentioning

confidence: 99%

“…Based on his ideas, we published some works by considering the CIOF and tuned the device frequency of the STNO device [5,6]. Both the macro spin model does frequency tunability of the STNO device [MATLAB] and the micro spin model [OOMMF] [8] as separate work. Based on our previously published articles, we have modeled a heterogeneous-based TP-STNO device] by considering the CIOF (called OF TP-STNO) and the two independent angles.…”

Section: Introductionmentioning

confidence: 99%

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Microwave frequency tunability via heterogeneous Oersted field tilted polarizer based spin torque nano oscillator

Bhoomeeswaran,

Sabareesan

2023

J. Phys.: Conf. Ser.

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Here, we have devised a heterogeneous-based Tilted Polarizer [TP] Spin Torque Nano Oscillator [STNO] along with the consideration of the Current Induced Oersted Field [CIOF]. The magnetization precession dynamics governed by Spin Transfer Torque [STT] are studied by solving Landau-Lifshitz-Gilbert-Slonczewski [LLGS] equation numerically. Here, β refers to an independent tilt angle of the pinned layer, and θ refers to an angle between the free layer magnetization and the easy axis of the device, respectively. The device emits a maximum frequency of about 77.5 GHz and PSD of 1.3 µW/mA2/GHz with 50 kA/m as the strength of CIOF. The author sparks that the modeled OE TP STNO device applies to High-Frequency applications and paves the way for forthcoming spintronic devices in the future.

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Section: Device and Its Dynamical Equationmentioning

confidence: 99%