Enhancement of Photoemission on p-Type GaAs Using Surface Acoustic Waves

Dong, Boqun; Afanasev, Andrei; Johnson, R. P.; Zaghloul, Mona

doi:10.3390/s20082419

Cited by 6 publications

(5 citation statements)

References 18 publications

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“…They demonstrated that the inner-crystal polarization potential generated by the flexoelectric field could be used to modulate the metalsemiconductor interface Schottky barrier and further tune charge-carrier transport. These findings provide prospects for semiconductor physical devices and electromechanical applications [26][27][28][29], and promote new research on semiconductor-based flexoelectricity technology [30,31].…”

Section: Introductionmentioning

confidence: 77%

Bending of PN junctions in flexoelectric semiconductors

Wei,

Tang,

Huang

2023

Eng. Res. Express

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In this paper, electromechanical fields and carrier distributions in a PN junction with coupling to bending deformation is investigated. Based on the macroscopic theory of flexoelectricity and the semiconductor drift-diffusion theory, a one-dimensional model of the PN junction is developed. The effects of doping level, flexoelectric coefficient and material constants on electrons and holes at the equilibrium state are analyzed. The I-V characteristic of the PN junction under the bias voltage is also obtained. The flexoelectric field is demonstrated to affect the built-in electric field of the PN junction and the carrier distributions in the p-doped and n-doped regions, suggesting an avenue for performance tuning of PN junctions. 

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Section: Introductionmentioning

confidence: 77%

Bending of PN junctions in flexoelectric semiconductors

Wei,

Tang,

Huang

2023

Eng. Res. Express

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“…F I G U R E 7 Room temperature PE characteristics of: (1) untreated GaAs substrate, (2) as-grown GaAs:Ge structure, (3,4) GaAs substrate and GaAs:Ge structure annealed at 650 • C for 60 minutes, respectively…”

Section: Photoemission Characterizationmentioning

confidence: 99%

“…It is commonly used for generating electron beams for applications such as electron microscopes, free electron lasers, and other particle accelerators. [1][2][3] It can also be used for devices of more modest performance requirements such as simple diodes, but then the cost of the photocathodes must be reduced. The energy of the light must be equal to or higher than the work function Φ of the emitting material so for many applications, high-energy ultra-violet (UV) light is required.…”

Section: Introductionmentioning

confidence: 99%

Enhanced photoemission from surface modulated GaAs:Ge

et al. 2021

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The present work reports the evolution and growth of GeGaAs(O) polytype nanoislands over GaAs p-type substrate with photoemission application in mind. Several morphological transformations from NIs to simultaneously present nanopits/holes are observed as a function of annealing parameters that is, temperature (350-800 • C) and time (5-90 minutes). Structural and elemental analyses are executed using atomic force microscopy, scanning electron microscopy and energy dispersive X-ray spectroscopy. Photoemission current of the nanostructured surfaces, measured upon exposure from 265 nm light emitting diode, is found to depend on the nanoislands size, which in turn depends on the annealing parameters. A maximum photoelectric emission is obtained for structure annealed at 650 • C for 60 minutes, upon which an increment of roughly two orders of magnitude is observed.

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“…It is a promising method for achieving single photon sources and single photon detectors 17 – 22 This makes use of the fact that, in a semiconductor piezoelectric material, the electrons and holes are separated by surface acoustic waves (SAWs) that have periodical potential, as shown in Fig. 1(a) 16 , 23 …”

Section: Introductionmentioning

confidence: 99%

Numerical analysis of surface acoustic wave driven carriers transport in GaAs/AlGaAs quantum well

Pang,

Cao,

Zheng

et al. 2023

J. Nanophoton.

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.Surface acoustic waves (SAWs) with a strong enough piezoelectric field can capture and transport electrons and holes. The presence of SAWs and their photo-generated carriers’ transport properties in the GaAs/AlGaAs quantum well (QW) is a potential scheme to achieve single photon sources and single photon detectors. We numerically solve the system of coupled Schrödinger and Poisson equations and the carriers’ radiative lifetime. A finite difference method of two-dimensional was developed as a conventional approach to the theoretical understanding of the presence in the QW through Python programs. The features of carriers’ radiative lifetime are discussed as functions of the SAW wavelengths and SAW amplitudes. The spatial separation and radiative lifetime extension of the electrons and holes in the SAW-driven QW was explained by the method.

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Enhancement of Photoemission on p-Type GaAs Using Surface Acoustic Waves

Cited by 6 publications

References 18 publications

Bending of PN junctions in flexoelectric semiconductors

Bending of PN junctions in flexoelectric semiconductors

Enhanced photoemission from surface modulated GaAs:Ge

Numerical analysis of surface acoustic wave driven carriers transport in GaAs/AlGaAs quantum well

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