Enhancement of photoluminescence due to erbium-doped in CdS thin films

Zelaya-Ángel, O.; Tomás, S.A.; Rodrı́guez, P.; Mendoza-Álvarez, J.G.; Lozada‐Morales, R.; Portillo-Moreno, O.; González‐Hernández, J.

doi:10.1007/s10853-011-5823-y

Cited by 21 publications

(6 citation statements)

References 24 publications

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“…2. Similar effects have been observed when the Cd +2 ion is substituted for Er +3 in Er‐doped CdS films 13, since the ionic radius of Cd 2+ is 1.09 Å and that of Er 3+ is somewhat smaller, 1.03 Å. Alternatively, when Er +3 is incorporated in Cd +2 sites, a shift towards lower values of the interplanar distance is registered. Other effects of the incorporation of Er, observable in the XRD data, are the improvement of the signal‐to‐noise ratio of the patterns in Fig.…”

Section: Resultssupporting

confidence: 69%

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Effect of Er‐doping on the structural and optical properties of Cd₂V₂O₇

Lozada‐Morales

Cid-García

López-Calzada

et al. 2012

Physica Status Solidi (a)

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The melt‐quenching method was used to prepare two groups of samples using CdO and V2O5 as starting materials. Taking into account that a crystalline‐amorphous phase transition would be expected for the CdO–V2O5 system, a first batch was prepared varying the proportions of CdO and V2O5 in the intervals 60–95 and 40–5 wt%, respectively. With the aim of investigating the effect of erbium in the phase transition and crystalline quality of the first group of samples, a second batch was fabricated with the same proportions of CdO and V2O5, with the addition of 5 wt% of Er(NO3)5H2O as source of Er3+ ions. It was found that crystalline or amorphous samples could be obtained depending on the relative concentrations of CdO and V2O5, and that the borderline between amorphous and crystalline samples was affected by the incorporation of Er. From X‐ray diffraction, it was possible to identify the formation of the ternary compound Cd2V2O7 in the crystalline cases. The Raman and infrared bands in these samples were in agreement with the lattice modes of Cd2V2O7. Additionally, an improvement in the crystalline quality of Cd2V2O7 was obtained for the Er‐doped samples. The effect of the local environment around the Er3+ ions on the room temperature photoluminescence was also investigated for the amorphous and crystalline samples.

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Section: Resultssupporting

confidence: 69%

“…In rare situations, an inverse effect may be observed, that is, an improvement in crystallinity can be obtained as a consequence of impurities incorporation 12. In the particular case of Er, it was found that its presence in CdS films improved their crystalline quality 13.…”

Section: Introductionmentioning

confidence: 99%

Effect of Er‐doping on the structural and optical properties of Cd₂V₂O₇

Lozada‐Morales

Cid-García

López-Calzada

et al. 2012

Physica Status Solidi (a)

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“…The yellow emission (YE, ∼2.03 eV) band, which corresponds to the transition from I Cd to valence band and/or the I Cd – V Cd complex defect, , can be clearly observed in all In-doped samples, which may suggest that the presence of I Cd or I Cd – V Cd complex defect is strongly related to the In incorporation. The increased YE intensity due to dopant effects has also been observed in Er-doped CdS films . Additionally, a broad red emission band (RE, ∼2.35 eV) is observed.…”

Section: Resultsmentioning

confidence: 60%

“…The increased YE intensity due to dopant effects has also been observed in Er-doped CdS films. 49 Additionally, a broad red emission band (RE, ∼2.35 eV) is observed. The presence of the RE band is attributed to the complex defects including V Cd and the transition of V S defects to the valence band.…”

Section: Methodsmentioning

confidence: 98%

Efficiency Enhancement of Cu(In,Ga)(S,Se)₂ Solar Cells by Indium-Doped CdS Buffer Layers

Cheng

Cai

Huang

et al. 2020

ACS Appl. Mater. Interfaces

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Improving power conversion efficiency of photovoltaic devices has been widely investigated; however, most research studies mainly focus on the modification of the absorber layer. Here, we present an approach to enhance the efficiency of Cu(In,Ga)(S,Se)2 (CIGSSe) thin-film solar cells simply by tuning the CdS buffer layer. The CdS buffer layer was deposited by chemical bath deposition. Indium doping was done during the growth process by adding InCl3 into the growing aqueous solution. We show that the solar cell efficiency is increased by proper indium doping. Based on the characteristics of the single CdS (with or without In-doping) layer and of the CIGSSe/CdS interface, we conclude that the efficiency enhancement is attributed to the interface-defect passivation of heterojunction, which significantly improves both open circuit voltage and fill factor. The results were supported by SCAPS simulations, which suggest that our approach can also be applied to other buffer systems.

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“…Therefore, organic crystals have been considered for the fabrication of some electroluminescent (EL) devices [1]. Several reports have investigated the emission bands in the visible region and this optical phenomenon is related to crystalline defects such as vacancies and interstices [2,3,4,5]. In this regard, they are ideally suited for multicolor display applications [6,7].…”

Section: Introductionmentioning

confidence: 99%

Experimental and DFT Study of the Photoluminescent Green Emission Band of Halogenated (−F, −Cl, and −Br) Imines

et al. 2019

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The morphological, optical, and structural changes in crystalline chiral imines derived from 2-naphthaldehyde as a result of changing the −F, −Cl, and −Br halogen (−X) atoms are reported. Scanning electron microscopy (SEM), optical absorption, photoluminescence (PL), and powder X-ray diffraction (XRD) studies were performed. Theoretical results of optical and structural properties were calculated using the PBE1PBE hybrid functional and compared with the experimental results. Differences in surface morphology, absorbance, XRD, and PL of crystals were due to the change of halogen atoms in the chiral moiety of the imine. Absorption spectra exhibited the typical bands of the naphthalene chromophore located in the ~200–350 nm range. Observed absorption bands in the UV region are associated with π→π* and n→π* electronic transitions. The band gap energy was calculated using the Tauc model. It showed a shift in the ~3.5–4.5 eV range and the crystals exhibited different electronic transitions associated with the results of absorbance in the UV region. XRD showed the monoclinic→orthorhombic crystalline phase transition. PL spectra displayed broad bands in the visible region and all the samples have an emission band (identified as a green emission band) in the ~400–750 nm range. This was associated with defects produced in the morphology, molecular packing, inductive effect and polarizability, crystalline phase transition, and increase in size of the corresponding halogen atoms; i.e., changes presumably induced by −C−X…X−, −C−X…N−, −C−N…π, and −C−X…π interactions in these crystalline materials were associated with morphological, optical, and structural changes.

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Enhancement of photoluminescence due to erbium-doped in CdS thin films

Cited by 21 publications

References 24 publications

Effect of Er‐doping on the structural and optical properties of Cd₂V₂O₇

Effect of Er‐doping on the structural and optical properties of Cd₂V₂O₇

Efficiency Enhancement of Cu(In,Ga)(S,Se)₂ Solar Cells by Indium-Doped CdS Buffer Layers

Experimental and DFT Study of the Photoluminescent Green Emission Band of Halogenated (−F, −Cl, and −Br) Imines

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Enhancement of photoluminescence due to erbium-doped in CdS thin films

Cited by 21 publications

References 24 publications

Effect of Er‐doping on the structural and optical properties of Cd2V2O7

Effect of Er‐doping on the structural and optical properties of Cd2V2O7

Efficiency Enhancement of Cu(In,Ga)(S,Se)2 Solar Cells by Indium-Doped CdS Buffer Layers

Experimental and DFT Study of the Photoluminescent Green Emission Band of Halogenated (−F, −Cl, and −Br) Imines

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Product

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Effect of Er‐doping on the structural and optical properties of Cd₂V₂O₇

Effect of Er‐doping on the structural and optical properties of Cd₂V₂O₇

Efficiency Enhancement of Cu(In,Ga)(S,Se)₂ Solar Cells by Indium-Doped CdS Buffer Layers