Nano-ZnS was deposited into porous silicon. By varying the
concentration of Zn2+ ion solution during nano-ZnS formation,
the amount of nano-ZnS in the porous silicon host can be controlled.
The doped porous silicon exhibited a gradual shift in its
photoluminescence peak from red to blue as a function of the nano-ZnS
coverage. At an optimum doping, white light photoluminescence was
obtained. A study in the luminescence lifetime has shown that the
radiative recombination at the blue end of the visible spectrum was
due to nano-ZnS, whereas luminescence emission at the red end of the
visible spectrum came from porous silicon. The latter luminescence
was due to the tunnelling of excited electrons from nano-ZnS into
porous silicon. Time-resolved photoluminescence has also shown that
radiative recombination was effectively dominated by the nano-ZnS.
The photoluminescence excitation results revealed the presence of two
excitation levels: one belonging to nano-ZnS at the near-ultraviolet
region, and another at about 520 nm from the surface states of porous
silicon. The doping of nano-ZnS into porous silicon demonstrates that
luminescence colour tuning is possible when an appropriate functional
material is introduced into porous silicon.