Enhancement of quantum cascade laser intersubband transitions via coupling to resonant discrete photonic modes of subwavelength gratings

Mikulicz, Monika; rygala, michal; Smołka, Tristan; Janczak, Mikolaj; Badura, Mikołaj; Łozińska, Adriana; Wolf, A.; Emmerling, Monika; Ściana, B.; Höfling, Sven; Czyszanowski, Tomasz; Sęk, G.; Motyka, M.

doi:10.1364/oe.496261

Cited by 4 publications

(1 citation statement)

References 49 publications

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“…By varying the delay, it was possible to achieve both temporal and spectral resolution of the signal which was interpreted based on the knowledge gained through previous experiments. 35…”

Section: Methodsmentioning

confidence: 99%

Ultrafast infrared spectroscopy of InAs/GaSb and InAs/InAsSb type-II superlattices

Rygala,

Bader,

Smolka

et al. 2024

Quantum Sensing and Nano Electronics and Photonics XX

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Modern optical gas detection systems utilize the technique of tunable laser absorption spectroscopy for different applications in science, manufacture, or medicine. Superlattice structures composed of semiconductors from the 6.1 Å family enable type-II band alignments and have the potential to exceed state of the art figure of merits of widely used infrared detectors. In this study, InAs/GaSb and InAs/InAsSb type-II superlattices were grown using molecular beam epitaxy and characterized using Fourier-transform infrared spectroscopy and pump-probe transient absorption technique. Photoluminescence spectra were obtained for all samples in 10 to 300K temperature range and then complemented with photoreflectance measurements for characteristic temperatures to increase the sensitivity of the measurement for less optically active transitions. In addition, pump-probe measurements were performed to investigate the dynamics of carrier relaxation and recombination processes in proximity of transition energies observed in previous experiments.

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“…By varying the delay, it was possible to achieve both temporal and spectral resolution of the signal which was interpreted based on the knowledge gained through previous experiments. 35…”

Section: Methodsmentioning

confidence: 99%

Ultrafast infrared spectroscopy of InAs/GaSb and InAs/InAsSb type-II superlattices

Rygala,

Bader,

Smolka

et al. 2024

Quantum Sensing and Nano Electronics and Photonics XX

Self Cite

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Preliminary study of selective contacts for hot carrier solar cells

Boyer-Richard,

Fan,

Chevalier

et al. 2024

EPJ Photovolt.

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Hot carrier solar cells are a concept of photovoltaic devices, which offers the opportunity to harvest solar energy beyond the Shockley-Queisser limit. Unlike conventional photovoltaic devices, hot carrier solar cells convert excess kinetic energy into useful electrical power rather than losing it through thermalisation mechanisms. To extract the carriers while they are still “hot”, efficient energy-selective contacts must be developed. In previous studies, the presence of the hot carrier population in a p-i-n solar cell based on a single InGaAsP quantum well on InP substrate at room temperature has been demonstrated by means of complementary optical and electrical measurements, leading to an operating condition for this device beyond the limit for classical device operation. This result allows to design a new generation of devices to increase the hot carrier conversion contribution. In this work, we study InGaAs/AlInAs type II heterojunction as a selective contact for a future hot carrier solar cell device epitaxially grown on (001) oriented InP substrate. Two p-i-n solar cells have been grown by molecular beam epitaxy on InP. The absorber is a 50 nm-thick InGaAs layer surrounded by AlInAs barriers, all lattice-matched to InP. Two architectures are compared, the first with two symmetrical AlInAs barriers and the second with a single InGaAs quantum well in the center of the n-side barrier to allow electron tunneling across the barrier. Electrical characteristics under laser illumination with two different wavelengths have been measured to investigate the effect of the selective contact compared to the barrier. This preliminary study of InGaAs/AlInAs-based selective contacts show that such III–V combination is adapted for a future hot carrier solar cell in the InP technology.

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Temperature dependence of refractive indices of InP , GaAs ,

Mikulicz,

Smolka,

Rygala

et al. 2024

Phys. Rev. Applied

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We present the results of Fourier-transform measurements for determination of refractive indices of four semiconductor alloys in the midinfrared spectral range from 10 to 300 K. We investigate double-sided-polished, undoped InP and GaAs substrates as well as In0.53Ga0.47As/InP and AlAs/GaAs distributed Bragg reflector (DBR) mirrors with their operational wavelength designed for 4 µm. Through analysis of measured transmittance spectra supported by ellipsometry it is possible to determine the temperature-dependent refractive indices of InP and GaAs from 1.3 to 11 µm. Furthermore, by using reflectivity measurements supported by numerical modeling of the two types of designed DBR structures the refractive indices of In0.53Ga0.47As and AlAs for around 4 µm are determined with their temperature dependencies. Data acquired through this method could lead to improvement of already existing optical semiconductor devices expanding their application for longer wavelengths. Published by the American Physical Society 2024

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Enhancement of quantum cascade laser intersubband transitions via coupling to resonant discrete photonic modes of subwavelength gratings

Cited by 4 publications

References 49 publications

Ultrafast infrared spectroscopy of InAs/GaSb and InAs/InAsSb type-II superlattices

Ultrafast infrared spectroscopy of InAs/GaSb and InAs/InAsSb type-II superlattices

Preliminary study of selective contacts for hot carrier solar cells

Temperature dependence of refractive indices of InP , GaAs ,

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