Enhancement of Reactivity in Au Etching by Pulse-Time-Modulated Cl<sub>2</sub> Plasma

Ohtake, Hiroto; Samukawa, Seiji; Oikawa, Hirokazu; Nashimoto, Y.

doi:10.1143/jjap.37.2311

Cited by 21 publications

(10 citation statements)

References 6 publications

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“…However, one advantage of the new high-density plasma etchers was that they operated at a much lower pressure than earlier parallel-plate RIE systems, and this tended to minimise redeposition and associated fencing issues [23]. An early high-density plasma study by Ohtake et al [24] utilised an ECR reactor and a chlorine-based plasma chemistry to etch gold and aluminium films. The plasma discharge was maintained from a microwave source, while separate RF power was supplied to the platen.…”

Section: Reactive Ion Etching Of Goldmentioning

confidence: 99%

Gold etching for microfabrication

2014

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The etching of gold is a key enabling technology in the fabrication of many microdevices and is widely used in the electronic, optoelectronic and microelectromechanical systems (MEMS) industries. In this review, we examine some of the available methods for patterning gold thin films using dry and wet etching techniques. Dry methods which utilise reactive ion etching (RIE) have a number of important advantages over other methods, but the low volatility of gold etch products has made the development of suitable processes problematic. More recently, the adoption of high-density plasma reactors with optimised chlorine-based chemistries has allowed improved processes to be developed, and etching in hydrogen plasmas also shows promise. Wet etching methods for gold have also been critically reviewed. Traditionally, iodine-and cyanide-based etch processes have been used, but in the last decade, a number of alternative etchants have been studied. Of particular interest is the recent development of a range of novel nonaqueous-based gold etchants, and the suitability of these etchants for microfabrication is assessed.

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Section: Reactive Ion Etching Of Goldmentioning

confidence: 99%

Gold etching for microfabrication

2014

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“…[2][3][4][5] The electron temperature in TM chlorine plasma decreases during the pulseoff time. [2][3][4][5] The electron temperature in TM chlorine plasma decreases during the pulseoff time.…”

Section: Introductionmentioning

confidence: 99%

Reactive and anisotropic etching of magnetic tunnel junction films using pulse-time-modulated plasma

Mukai

Ohshima

Hada

et al. 2007

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Inverse magnetoresistance in magnetic tunnel junction with a plasma-oxidized Fe electrode and the effect of annealing on its transport properties Reactive and anisotropic etching of magnetic tunnel junction ͑MTJ͒ stacked films has been achieved using pulse-time-modulated ͑TM͒ plasma. While corrosion and delamination of MTJs are observed in continuous wave discharge plasma, a chlorine pulse-time-modulated plasma achieved a high MTJ etching rate without corrosion or delamination. The authors think that the negative ions enhance the chemical reactions on the surface of magnetic films. The magnetic characteristics are also significantly improved by using TM plasma because of reduced residues and improved tapered profiles. Accordingly, TM plasma etching is a promising candidate for high-rate and damage-free MTJ etching for magnetoresistive random access memory devices.

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“…[2][3][4][5] The electron temperature in TM chlorine plasma decreases during pulseoff time. These low-energy electrons generate a large number of negative ions through dissociative attachment reactions.…”

Section: Introductionmentioning

confidence: 99%

High-Performance and Damage-Free Magnetic Film Etching using Pulse-Time-Modulated Cl₂ Plasma

Mukai

Hada

Tahara

et al. 2006

jjap

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We have developed a reactive ion etching (RIE) technique for magnetic films using pulse-time-modulated (TM) plasma. Using TM plasma etching can make the etching process high-performance and free of magnetic damage and corrosion. On the other hand, the conventional continuous wave discharge (CW) plasma etching process causes corrosion problems and degrades magnetic properties. We speculate that the negative ions injected from the TM plasma enhanced the chemical reaction on the magnetic film surface. We conclude that the TM plasma etching is a high-performance magnetic film etching process for fabricating magnetoresistive random access memory (MRAM).

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Enhancement of Reactivity in Au Etching by Pulse-Time-Modulated Cl₂ Plasma

Cited by 21 publications

References 6 publications

Gold etching for microfabrication

Gold etching for microfabrication

Reactive and anisotropic etching of magnetic tunnel junction films using pulse-time-modulated plasma

High-Performance and Damage-Free Magnetic Film Etching using Pulse-Time-Modulated Cl₂ Plasma

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Enhancement of Reactivity in Au Etching by Pulse-Time-Modulated Cl2 Plasma

Cited by 21 publications

References 6 publications

Gold etching for microfabrication

Gold etching for microfabrication

Reactive and anisotropic etching of magnetic tunnel junction films using pulse-time-modulated plasma

High-Performance and Damage-Free Magnetic Film Etching using Pulse-Time-Modulated Cl2 Plasma

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Product

Resources

About

Enhancement of Reactivity in Au Etching by Pulse-Time-Modulated Cl₂ Plasma

High-Performance and Damage-Free Magnetic Film Etching using Pulse-Time-Modulated Cl₂ Plasma