2012
DOI: 10.1063/1.4731511
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Enhancement of Seebeck coefficient and figure of merit of Ga-doped single crystal p-BiSbTe3

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Cited by 8 publications
(7 citation statements)
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“…e ., the increasing of DOS effective mass m d * ), as observed in Sn-doped Bi 2 Te 3 (Figure c). Both theory and experiment confirmed that Sn in Bi 2 Te 3 does not behave as a regular acceptor in the rigid-band model, which would then only shift the E F , while forms the RL responsible for the observed increase of S . , A work has reported an anomalous enhancement of S and zT in a Ga-doped BiSbTe 3 alloy, possibly caused by the RL formation …”
Section: Enhancement Mechanisms In Power Factormentioning
confidence: 59%
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“…e ., the increasing of DOS effective mass m d * ), as observed in Sn-doped Bi 2 Te 3 (Figure c). Both theory and experiment confirmed that Sn in Bi 2 Te 3 does not behave as a regular acceptor in the rigid-band model, which would then only shift the E F , while forms the RL responsible for the observed increase of S . , A work has reported an anomalous enhancement of S and zT in a Ga-doped BiSbTe 3 alloy, possibly caused by the RL formation …”
Section: Enhancement Mechanisms In Power Factormentioning
confidence: 59%
“…Both theory and experiment confirmed that Sn in Bi 2 Te 3 does not behave as a regular acceptor in the rigid-band model, which would then only shift the E F , while forms the RL responsible for the observed increase of S. 99,108 A work has reported an anomalous enhancement of S and zT in a Gadoped BiSbTe 3 alloy, possibly caused by the RL formation. 109 To make the RL conductive, the impurity state preferably has a s-or p-like character rather than a highly localized d-or flike state. Namita et al, 110 however, calculated that Po doping forms a double resonant state peak in the valence band and the conduction band, as well as the incorporation of Na or In results in the resonant states near the valence band edge based on detailed first-principles studies.…”
Section: Manipulation Of the Carrier Concentrationmentioning
confidence: 99%
“…73 Therefore, it is advised to prohibit the use of the lowtemperature ΔE VB 1 −VB 2 between pertinent valence bands directly in the construction of its band structure. Instead, fitting band parameters for the two valence band model to the measured transport properties while optimizing the postulated The literature data are from the Stordeur et al, 67 Testardi et al, 68 Gaidukova et al, 54 Erofeev et al, 53 Kim et al, 17 Drasǎr et al, 69 and Kulbachinskii et al 70 67 Gaidukova et al, 54 Erofeev et al, 53 Kim et al, 17 Drasǎr et al, 69 and Kulbachinskii et al 70…”
Section: ■ Modeling Behavior Of Converging Bandsmentioning
confidence: 99%
“…Pisarenko plots for (a) x = 0.5 and (b) x = 0.75. (c) m d * as a function of the alloy composition x.The literature data are from the Stordeur et al,67 Testardi et al,68 Gaidukova et al,54 Erofeev et al,53 Kim et al,17 Drasǎr et al,69 and Kulbachinskii et al70 Panels b and c are adapted with permission from ref 17. Copyright 2017 Elsevier.…”
mentioning
confidence: 99%
“…Earlier work focused on their use as dilute magnetic semiconductors, [7] and successful ferromagnetic (a) E-mail: Thorsten.Hesjedal@physics.ox.ac.uk (corresponding author) doping with, e.g., Mn [8][9][10] and Fe [11], has been reported in thin film and bulk samples. Cr doping has been predicted to lead to an insulating ferromagnetic ground state in Bi 2 Se 3 [1,12], as required for the QAH effect, whereas Mn and Fe doping leads to a metallic state [13].…”
mentioning
confidence: 99%