Enhancement of sensor response by TiO2 mixing and Au coating on ZnO tetrapod sensor

Size‐Independent and Ultrahigh CO Gas Sensor Based on TiO2 Modified ZnO Tetrapods

“…Reported in our previous work, ZnO tetrapods modified by TiO 2 powder ( T ‐TiZnO) sensor showed an excellent sensing response toward ethanol gas over the T ‐ZnO and ZnO powder ( P ‐ZnO) sensors which is attributed to the modification of charge concentration in air and the reaction rate of oxygen ion species with ethanol gas . A similar result was reported by Zhu et al for ZnO thin film gas sensor…”

“…A similar result was reported by Thepnurat et al for ZnO‐based sensor and Trawka et al for WO 3 nanoparticle sensor . On the other hand, transition metal and metal oxide doped acting as a foreigner additive could alter the sensing properties of sensor . Zhou et al successfully improved CO sensing response of SnO 2 nanomaterials by using Ni and Zn as doping resources .…”

“…Up to now, metal‐oxide semiconductors have received much attention for gas sensor and other devices such as dye‐sensitized solar cells, humidity sensors, field emission devices, thermoelectric materials, and so on since they own many promising properties: chemically and thermally stable, non‐toxic material, and biocompatibility. Several metal‐oxide semiconductors have been examined showing their promising properties for detection of several gases.…”

“…It was previously reported that morphology, shape, and size of sensing material controlled the sensing properties of gas sensor . In contrast, catalytic metals including Au, Pd, Pt, and Ag were loaded onto the sensor surface modified as a surface state of sensor with the intention of improving the sensing properties . These improved the concentration of oxygen (chemical sensitization) or the redox state of additive (electronic sensitization)…”

MoS2@ZnO nano-heterojunctions with enhanced photocatalysis and field emission properties

“…ZnO, as one of the most successful n-type semiconductors, has been widely applied in photocatalysis, 23 sensors, 24 and field emission fields. 25 Due to its wide band gap (3.37 eV), ZnO has been combined with other semiconductors with narrower band gaps, including Cu 2 S, 26 Cu 2 O, 27 CdS, 28 CdSe, 29 etc., to enhance various performances.…”