Enhancement of spin-orbit torques in Ta/Co20Fe60B20/MgO structures induced by annealing

Zheng, Yewei; Wang, Tao; Su, Xianpeng; Chen, Yifei; Wang, Ying; Lv, Hua; Cardoso, S.; Yang, Dezheng; Cao, Jiangwei

doi:10.1063/1.4993765

Cited by 6 publications

(5 citation statements)

References 46 publications

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“…It is clear that the STT efficiency from most groups crowed around the 1 mT/(10 6 A/cm 2 ). Our maximum value reaches 4.259 mT/(10 6 A/cm 2 ) especially along the longitudinal component, which is almost 4 times larger than the reported results [14,20,24,27,31,32]. The STT efficiency of the transverse component is still weak that is might related to the spin diffusion process in the FM layer [34,35].…”

Section: Resultscontrasting

confidence: 62%

“…In Fig. 4, such an enhanced STT efficiency was achieved by optimizing the Pt thickness compared to the reported results [14,15,[19][20][21][22][23][24][25][26][27][28][29][30][31][32]. Both axis are the transverse component and longitudinal component of the STT efficiency.…”

Section: Resultsmentioning

confidence: 71%

“…We experimentally demonstrated that the STT efficiency in Ta/Pt/FM structures can be enhanced while the Pt layer has a specific thickness. The enhanced STT efficiency is almost 4 times larger than those reported [14,20,24,27,31,32]. Our work provides a new approach to further reduce power consumption in magnetization switching.…”

Section: Introductionmentioning

confidence: 73%

“…The square shape in the Hall resistance was attributed to the anomalous Hall effect induced by the magnetization with PMA. Thus, we are allowed to evaluate the STT efficiency using harmonic Hall measurment [19][20][21][22][23][24][25][26][27][28][29][30][31][32].…”

Section: Charge-spin Conversion and Spin Diffusionmentioning

confidence: 99%

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Enhanced spin transfer torque in platinum/ferromagnetic-metal structures by optimizing the platinum thickness

Xue

Guo

Wang

et al. 2020

Journal of Magnetism and Magnetic Materials

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Spin transfer torque (STT) driven by a charge current plays a key role in magnetization switching in heavy-metal/ferromagnetic-metal structures. The STT efficiency defined by the ratio between the effective field due to STT and the current density, is required to be improved to reduce energy compulsions in the STT-based spintronic devices. In this work, using the harmonic Hall measurement method, we experimentally studied the STT efficiency in platinum(Pt)/FM structures as a function of the Pt thickness. We found that the STT efficiency strongly depends on the Pt thickness and reaches a maximum value of 4.259 mT/(10 6 A/cm 2 ) for the 1.8-nm-thickness Pt sample. This result indicates that competition between spin Hall effect (SHE) and Rashba effect as well as spin diffusion process across the Pt layer determines the Pt thickness for the maximum STT efficiency. We demonstrated the role played by the spin diffusion besides the spin current generation mechanisms in improvement of the STT efficiency, which is helpful in designing STT-based devices.

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Section: Resultscontrasting

confidence: 62%

Section: Resultsmentioning

confidence: 71%

Section: Introductionmentioning

confidence: 73%

Section: Charge-spin Conversion and Spin Diffusionmentioning

confidence: 99%

See 2 more Smart Citations

Enhanced spin transfer torque in platinum/ferromagnetic-metal structures by optimizing the platinum thickness

Xue

Guo

Wang

et al. 2020

Journal of Magnetism and Magnetic Materials

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“…7,8) Also, other properties, such as the tunnel magnetoresistance (TMR) ratio and critical switching current density (J c ) are highly influenced by the annealing process. [9][10][11][12][13][14][15][16][17][18] In particular, the thermal stability of the SOT-MTJ is required to be compatible with the CMOS back-endof-line processes. [19][20][21] Therefore, to sustain PMA after processing with high temperature, it is necessary to study on the annealing effect of SOT-MTJ.…”

Section: Introductionmentioning

confidence: 99%

Annealing effect on the magneto-electric properties of SOT-MTJs from micro to nano-sized dimensions

Zhao

Gao

et al. 2023

Jpn. J. Appl. Phys.

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Spin-orbit torque magnetic random-access memory (SOT-MRAM) exhibits great potential to be next-generation memory. Annealing is an essential process for SOT magnetic tunnel junctions (SOT-MTJs) thin films. To optimize the SOT-MTJ thin films, studying the different dimensions from micro-size to nano-size is very necessary. Here, we investigate the annealing effect on magneto-electric properties of micro-scaled and nano-scaled SOT-MTJs. The tunnel magnetoresistance (TMR) and critical current density (Jc) increase after annealing attributing to the improved crystallization of CoFeB layers and perpendicular magnetic anisotropy (PMA), respectively. However, the TMR increment of micro-scaled SOT-MTJ is larger than that in nano-scale, due to the reduced defects of micro-scaled SOT-MTJs by annealing. Additionally, the Jc of nano-scaled SOT-MTJ is decuple for that of micro-scaled SOT-MTJ because of the improved PMA and diminished thermal effect. This work assesses the different annealing effect in micro- and nano-sized dimensions and supplies experiment foundation to optimize the performance of SOT-MTJs.

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Spin orbit torques induced magnetization reversal through asymmetric domain wall propagation in Ta/CoFeB/MgO structures

Cao

Chen

Jin

et al. 2018

Sci Rep

Self Cite

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The magnetization reversal induced by spin orbit torques in the presence of Dzyaloshinskii-Moriya interaction (DMI) in perpendicularly magnetized Ta/CoFeB/MgO structures were investigated by using a combination of Anomalous Hall effect measurement and Kerr effect microscopy techniques. By analyzing the in-plane field dependent spin torque efficiency measurements, an effective field value for the DMI of ~300 Oe was obtained, which plays a key role to stabilize Néel walls in the film stack. Kerr imaging reveals that the current-induced reversal under small and medium in-plane field was mediated by domain nucleation at the edge of the Hall bar, followed by asymmetric domain wall (DW) propagation. However, as the in-plane field strength increases, an isotropic DW expansion was observed before reaching complete reversal. Micromagnetic simulations of the DW structure in the CoFeB layer suggest that the DW configuration under the combined effect of the DMI and the external field is responsible for the various DW propagation behaviors.

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Enhancement of spin-orbit torques in Ta/Co20Fe60B20/MgO structures induced by annealing

Cited by 6 publications

References 46 publications

Enhanced spin transfer torque in platinum/ferromagnetic-metal structures by optimizing the platinum thickness

Enhanced spin transfer torque in platinum/ferromagnetic-metal structures by optimizing the platinum thickness

Annealing effect on the magneto-electric properties of SOT-MTJs from micro to nano-sized dimensions

Spin orbit torques induced magnetization reversal through asymmetric domain wall propagation in Ta/CoFeB/MgO structures

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