Dielectric sesquioxide films (Sc 2 O 3 , Y 2 O 3 , and Lu 2 O 3 ) were fabricated by pulsedlaser deposition and tested in terms of their laser damage properties for pulses of 500 fs duration, at a wavelength of 1030 nm and at a 10 Hz repetition rate. Comparable tests were performed with magnetron-sputtered thin films of established optical-coating materials (SiO 2 , HfO 2 , and Nb 2 O 5 ), whose results served as a benchmark. The laser-induced damage thresholds of the sesquioxides are comparable to each other, and in the multi-pulse test regime show values close to ones of HfO 2 coatings. A lower damage threshold was observed for the polycrystalline Lu 2 O 3 film grown on sapphire compared to single-crystal Lu 2 O 3 grown on yttrium aluminium garnet (Y 3 Al 5 O 12 ), attributed to the highly textured morphology and potential for a greater density of defect states in these films. We conclude that pulsed-laser deposition is a potential fabrication method of sesquioxides for use in high-power resistant optical components for ultrashort-pulse lasers. © The Authors. Published by SPIE under a Creative Commons Attribution 4.0 International License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.