BiCuSeO oxyselenide, one of the best oxygen-containing thermoelectric materials, is promising with great potential applications. In this work, we present a high ZT of >1.3 in Bi 0.90 Pb 0.10 Cu 0.96 Fe 0.04 SeO fabricated via microwave synthesis and subsequent spark plasma sintering (SPS). We added 3−4 atom % Fe to the Pb-doped BiCuSeO to regulate the hole carrier concentration and mobility to 0.8−1.0 × 10 20 cm −3 and ∼40 cm 2 V −1 S −1 , respectively, achieving moderate electrical conductivity, high Seebeck coefficient, and low carrier thermal conductivity simultaneously in a dual-doped sample. Under the synergistic enhancement by stress field, dislocation, and nanophase, the lattice thermal conductivity of Bi 0.90 Pb 0.10 Cu 0.96 Fe 0.04 SeO is limited to 0.24−0.49 W m −1 K −1 at 300−873 K. The development of efficient preparation methods for highperformance thermoelectric materials is significant to promote the application of thermoelectric conversion technology.