Enhancement of Thermal Transfer From β-Ga₂O₃ Nano-Membrane Field-Effect Transistors to High Thermal Conductivity Substrate by Inserting an Interlayer

Enhancing the interfacial thermal conductance of Si/PVDF by strengthening atomic couplings

“…3(c), the enhancement of this work is compared with the results of other methods, such as those using interface defects 25–27 and interlayers. 28–31 The results in this work demonstrate remarkable potential for significantly enhancing ITC compared to those of other existing methods or studies.…”

“…In terms of the interface, the match/mismatch of two materials significantly influences its ITC. 13,17 When one side is an amorphous structure, the range of phonon modes is much 27 Cu/TiC/diamond, 28 Cr/Cu/Ni, 29 β-Ga 2 O 3 /ZrO 2 /sapphire, 30 diamond/graphene/copper, 31 graphene/organic, 32 graphene/epoxy, 33 graphene/HMX, 34 Au/Qz, 35 graphene/silicone, 36 Si/CNT 37 and Cu/SiO 2 broader than that in a crystal. This may lead to an abundance of matching phonon modes across the interface, which facilitates efficient interfacial thermal conduction.…”

“…[20][21][22][23][24] The modification of surface structures is an effective approach to enhance ITC. 24 Currently, there are various approaches available to enhance ITC, including the utilization of interface defects, [25][26][27] interlayers [28][29][30][31] and surface chemical treatment. [32][33][34][35][36][37][38] While the utilization of interface defects does not require the introduction of external materials, more controllable and accurate methods for defect introduction still need to be explored.…”

“…(b) TTC of composite structures: for Si/P-PVDF, Si/U-PVDF, and Si/A-PVDF composite structures, through modification of the Si surface TTC of composite structures can be increased by 266%, 83%, and 76%. (c) Increased ratio of ITC versus those of other modulation methods (graphene/h-BN,25 BP/MoS 2 , 26 graphene/MoS 2 ,27 Cu/TiC/diamond,28 Cr/Cu/Ni,29 β-Ga 2 O 3 /ZrO 2 /sapphire,30 diamond/graphene/copper, 31 graphene/organic, 32 graphene/epoxy, 33 graphene/HMX,34 Au/Qz,35 graphene/silicone,36 Si/CNT 37 and Cu/SiO 2…”

Anisotropic Electron Mobility and Contact Resistance of β-Ga2O3 Obtained via Radio Frequency Transmission Line Methods on Schottky Devices

“…To date, a crystalline oxide semiconductor β-Ga 2 O 3 has been attracting much attention from researchers, due to its promising semiconducting properties: temperature stability, large energy band gap-induced optical transparencies, high breakdown electric ( E )-field, and minimum leakage current. − Gallium trioxide is essentially known to have five different polymorphs, α, β, γ, δ, and ε. − Among such polymorphs, monoclinic β-Ga 2 O 3 is the most stable form, and therefore, both the bulk single crystal and epitaxial thin film growths of β-Ga 2 O 3 have been carried out. High temperature and power transistors using β-Ga 2 O 3 as active channel have followed in report. − Although thin β-Ga 2 O 3 is obtained from epitaxial growth on a sapphire substrate, it could also be achieved via mechanical exfoliation after bulk crystal growth because monoclinic 3D β-Ga 2 O 3 has a large interplanar distance in (100)-orientation for weak bond-induced cleavage ([100] = 1.220 nm, [010] = 0.304 nm, [001] = 0.580 nm, β = 103.83°). ,,,,, In fact, a β-Ga 2 O 3 film with thickness less than 100 nm is hardly found by exfoliation, due to its three-dimensional (3D) nature.…”