Varying the valence electron concentration per unit cell (VEC) in a half-Heusler (HH) material gives a large number of structures and substructures that can be exploited to improve the thermoelectric performance.Herein, we studied Zr 9 Ni 7 Sn 8 with VEC ¼ 17.25, which is smaller than 18 for normal ZrNiSn half-Heusler, to explore the structural modifications for improvement of thermoelectric performance. The structural analysis employing XRD, SEM and TEM confirms the resulting material to be a composite of HH and Ni 3 Sn 4 -type phases. Rietveld analysis estimates the volume fraction of HH to be 75.6 AE 1.2% and 24.6 AE 0.8% for Ni 3 Sn 4 phase. Interestingly, the present composite results in a substantial increase in electrical conductivity (s) by $75% and a drastic reduction in thermal conductivity (k) by $56%, leading to a thermoelectric figure of merit (ZT) of 0.38 at 773 K, which is $85% higher than in normal HH ZrNiSn.