Singleâphase white luminescence phosphors are emerging for potential phosphorâconverted white lightâemitting diodes (pcâWLEDs) and alternatives to trichromatic phosphor blends. In this work, Ba2ZnWO6:Bi3+ phosphors are prepared by a highâtemperature solidâstate reaction method and the luminescent properties are investigated. The broadband excitation from 250 to 400Â nm is perfectly matched with the emission of nearly ultraviolet (nâUV) InGaN chip, which ultrabroadband emission band (full width at half maximum = 217Â nm) can cover a wider luminescence region. Li+/Na+/K+ codoping is more desirable for the ultrabroadband emission of Ba2ZnWO6:0.006Bi3+ due to the charge compensation and rationally designed lattice distortion while improving the thermal stability of the phosphor. Furthermore, tunable emissions can be achieved either by changing the content of doped ions or the excitation wavelength due to the different occupation of Ba2+ and Zn2+ sites by Bi3+ ions. Finally, singleâphase warm WLED ((x, y) = (0.4170, 0.4035)) devices with a correlated color temperature of 3329 K and color rendering index of Ra = 75.3 are successfully prepared using Ba2ZnWO6:0.006Bi3+, 0.03Na+ phosphor, and 365Â nm InGaN chips. These results indicate that Ba2ZnWO6:Bi3+ has excellent potential as phosphor for nâUV pcâWLEDs and provides new ideas for the application of ultrabroadband emitting phosphors in WLEDs.