Enhancement of weak localization for nitrogen-doped graphene by short range potentials

Li, Xiong; Zhuang, Jincheng; Sun, Yue; Bai, Jing; Zafar, Zainab; Ni, Zhenhua; Jin, Biaobin; Shi, Zhixiang

doi:10.1016/j.carbon.2014.10.079

Cited by 9 publications

(10 citation statements)

References 33 publications

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“…One can convert these time scales in length scales to obtain L φ = 70 nm and L µ = 21 nm for undoped graphene and L φ ≈ 5 nm and L µ ≈ 4 nm for N-doped graphene. The value found for L φ differs drastically from the value found for the same quantity by Li et al (about 100 nm at that temperature) [119]. This indicates that the regimes examined in these two reports are very different.…”

Section: Magnetoresistance Experiments On Chemically-doped Graphenecontrasting

confidence: 79%

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Electronic properties of chemically doped graphene

Joucken

Henrard

Lagoute

2019

Phys. Rev. Materials

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Chemical doping of graphene is the most robust way of modifying graphene's electronic properties. We review here the results obtained so far on the electronic structure and transport properties of chemically-doped graphene, focusing on the results obtained with scanning tunneling micropscopy/spectroscopy (STM/S), angle-resolved photoemission spectroscopy (ARPES), and magnetoresistance (MR) measurements. The majority of the results reported have been obtained on nitrogendoped samples, but boron-doped graphene has also been well documented. Besides the appearance of the dopant on STM topographic images, the main questions that have been addressed are the atomic configurations of the doping and their doping efficiency (number of electron/hole brought to the graphene lattice). Both can be addressed by a local probe such as STM/S. The doping efficiency has also been complementary studied via direct visualization of the band structure with ARPES. The effect of the dopants on the electronic transport properties and in particular their influence on the scattering mechanisms is also presented. Finally, avenues for future research efforts are suggested.

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Section: Magnetoresistance Experiments On Chemically-doped Graphenecontrasting

confidence: 79%

“…The first report of MR measurements on chemically-doped graphene was by Li et al (Fig. 17) [119]. Both pristine (Fig.…”

Section: Magnetoresistance Experiments On Chemically-doped Graphenementioning

confidence: 99%

Electronic properties of chemically doped graphene

Joucken

Henrard

Lagoute

2019

Phys. Rev. Materials

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“…1F and fig. S3A), R s increases as the temperature is reduced from 300 to 5 K and exhibits a lnT dependence due to the weak localization behavior commonly observed from 2D materials at low temperature (23)(24)(25). The Ni film/graphene (blue line II in Fig.…”

Section: Resultsmentioning

confidence: 86%

Graphene-mediated ferromagnetic coupling in the nickel nano-islands/graphene hybrid

et al. 2021

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Nanoscale magnetic structures are fundamental to the design and fabrication of spintronic devices and have exhibited tremendous potential superior to the conventional semiconductor devices. However, most of the magnetic moments in nanostructures are unstable due to size effect, and the possible solution based on exchange coupling between nanomagnetism is still not clear. Here, graphene-mediated exchange coupling between nanomagnets is demonstrated by depositing discrete superparamagnetic Ni nano-islands on single-crystal graphene. The heterostructure exhibits ideal two-dimensional (2D) ferromagnetism with clear hysteresis loops and Curie temperature up to 80 K. The intrinsic ferromagnetism in graphene and antiferromagnetic exchange coupling between graphene and Ni nano-islands are revealed by x-ray magnetic circular dichroism and density functional theory calculations. The artificial 2D ferromagnets constitute a platform to study the coupling mechanism between complex correlated electronic systems and magnetism on the nanoscale, and the results and concept provide insights into the realization of spin manipulation in quantum computing.

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“…The opposite effect, weak anti‐localization (WAL) occurs if the scattering paths are intersecting destructively, which leads to a decrease in resistance. Transitions between WL and WAL have been observed above a critical magnetic field …”

Section: D: Doped and Undoped Graphenementioning

confidence: 99%

Dimensional Confinement in Carbon‐based Structures – From 3D to 1D

et al. 2017

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We present an overview of charge transport in selected one-, two-and three-dimensional carbon-based materials with exciting properties. The systems are atomically defined bottom-up synthesized graphene nanoribbons, doped graphene and turbostratic graphene micro-disks, where up to 100 graphene layers are rotationally stacked. For turbostratic graphene we show how this system lends itself to spintronic applications. This follows from the inner graphene layers where charge carriers are protected and thus highly mobile. Doped graphene and graphene nanoribbons offer the possibility to tailor the electronic properties of graphene either by introducing heteroatoms or by confining the system geometrically. Herein, we describe the most recent developments of charge transports in these carbon systems.

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Enhancement of weak localization for nitrogen-doped graphene by short range potentials

Cited by 9 publications

References 33 publications

Electronic properties of chemically doped graphene

Electronic properties of chemically doped graphene

Graphene-mediated ferromagnetic coupling in the nickel nano-islands/graphene hybrid

Dimensional Confinement in Carbon‐based Structures – From 3D to 1D

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