Enhancing antireflection property of silicon through direct picosecond laser surface texturing

Abstract

Crystalline silicon was laser surface textured by picosecond pulsed laser to enhance its antireflection property. The influence of laser scan speed and number of passes in fabricating the uniform surface microtexture were evaluated. Surface texture so generated was investigated and a grid of spherical domes and cavities, with nanoripples in the order of incident laser wavelength spread over it was observed. Reflectivity of bare silicon was greater than 40% and was significantly reduced well below 2% upon laser texturing, over a wavelength range of 400 to 700 nm.Antireflecting surface is an essential requirement for more efficient performance of devices for optical and photovoltaic application.

Silicon Nanocone Arrays via Pattern Transfer of Mushroomlike SiO2 Nanopillars for Broadband Antireflective Surfaces

“…20 Ultrafast laser irradiation is a viable means of fabricating silicon nanocone arrays in a controllable manner. 21,22 As an example, reflectivity was reduced below 2% upon laser texturing over the wavelength range from 400 to 700 nm, in a prior study. 21 Another promising approach involves the use of self-masked dry etching techniques based on high-density electron cyclotron resonance plasma etching, and these methods have been reported to produce nanocone arrays having sharp tips.…”

“…21,22 As an example, reflectivity was reduced below 2% upon laser texturing over the wavelength range from 400 to 700 nm, in a prior study. 21 Another promising approach involves the use of self-masked dry etching techniques based on high-density electron cyclotron resonance plasma etching, and these methods have been reported to produce nanocone arrays having sharp tips. 23,24 The precise tuning of the etching parameters can give tall nanocones with heights of 1−16 μm and base diameters of approximately 200 nm.…”

“…Therefore, there has been a focus on the fabrication and analysis of black silicon made of nanocone arrays. , Top-down approaches, including electron-beam or focused-ion-beam lithography, are promising approaches to obtaining such materials, but have the drawback of limited light diffraction . Ultrafast laser irradiation is a viable means of fabricating silicon nanocone arrays in a controllable manner. , As an example, reflectivity was reduced below 2% upon laser texturing over the wavelength range from 400 to 700 nm, in a prior study . Another promising approach involves the use of self-masked dry etching techniques based on high-density electron cyclotron resonance plasma etching, and these methods have been reported to produce nanocone arrays having sharp tips. , The precise tuning of the etching parameters can give tall nanocones with heights of 1–16 μm and base diameters of approximately 200 nm.…”