Enhancing Detectivity of Indium-Oxide-Based Photodetectors via Vertical Nanostructuring Through Glancing Angle Deposition

Nath, Amitabha; Mahajan, Bikram Kishore; Singh, L. Robindro; Vishwas, Shubhajit; Nanda, Rajib Kumar; Sarkar, Mitra Barun

doi:10.1007/s11664-021-08889-6

Cited by 18 publications

(3 citation statements)

References 48 publications

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“…The optical bandgap of all samples were calculated using tauc's plot as shown in Figure 4. [14] The corresponding bandgaps were summarized in table 3. Reports has been found that UV ozone treatment might induce a shift in the apparent bandgap of the Ga2O3 film, which is seen here in our results.…”

Section: Resultsmentioning

confidence: 99%

Impact of UV-ozone (UVO) treatment on optical and electrical properties of RF sputtered Ga2O3 thin films for opto-electronic application

Mishra,

Saha,

Bhowmick

et al. 2023

Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XX

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Ga2O3 has established to be a promising material for deep UV and UV optoelectronics and sensing applications. However, a major drawback of Ga2O3 thin film based optoelectronic devices is the existence of native point defects which can result in the creation of sub-bandgap absorption, carrier scattering centres, and leakage channels and becomes an obstruction to their efficient device applications. To overcome this high temperature annealing processes are required which not only leads to a rise in the thermal budget but also put many fabrication and technological bounds in device fabrication. Therefore, in this work we report room temperature ultraviolet-ozone (UVO) annealing as a facile and cost-effective method which can control defect states and improve the optical efficiency of Ga2O3 thin film. The Ga2O3 thin films were deposited by radio frequency (RF) sputtering technique on p-Si at room temperature. The grown films were subsequently subjected to UV-Ozone (UVO) annealing for 30, 50, 70, and 90 min at room temperature. The atomic force microscopy result shows the impacts of UV-Ozone (UVO) annealing time on the film roughness which further associated with reduced oxygen vacancies (Vo) concentration. Optimum time of UVO annealing for Ga2O3 thin films was estimated to be 50 min. Finally, the variation in current-voltage (I-V) characteristics of Ga2O3/p-Si heterojunctions are estimated to understand the effect UVO annealing on its electrical properties of RF sputtered Ga2O3 thin film.

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Section: Resultsmentioning

confidence: 99%

Impact of UV-ozone (UVO) treatment on optical and electrical properties of RF sputtered Ga2O3 thin films for opto-electronic application

Mishra,

Saha,

Bhowmick

et al. 2023

Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XX

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“…Where, α is known as absorption coefficient, α0 is a constant, hν is incident photon energy, and EU is the Urbach energy [40,41]. The EU signifies the spread of defect energy states inside the bandgap.…”

Section: Optical Properties Analysismentioning

confidence: 99%

Silver Nanoparticles Textured Oxide Thin Films for Surface Plasmon Enhanced Photovoltaic Properties

et al. 2021

Self Cite

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In this report, Ag nanoparticles were fabricated using single-step glancing angle deposition (SS-GLAD) technique upon In2O3/TiO2 thin film. Afterwards, a detailed analysis was done for the two samples such as In2O3/TiO2 thin film and In2O3/TiO2 thin film/Ag nanoparticles, to inspect the field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD), ultraviolet (UV) spectroscopy and electrical properties. The reduction in bandgap energy for the samples of In2O3/TiO2 thin film/Ag nanoparticles (~4.16 eV) in comparison with the In2O3/TiO2 thin film (~4.28 eV) was due to trapped e-h recombination at the oxygen vacancies and electron transmission of Ag to the conduction band of the In2O3/TiO2 thin films. Moreover, under irradiation of photons Ag nanoparticles generated inorganic Ag-O compound attributable to the localized surface plasmon resonance (LSPR). Also, a ~90% high transmittance, ~60% and ~25% low reflectance in UV and visible region, fill factor (FF) of 53%, as well as power conversion efficiency (PCE) of 15.12% was observed for In2O3/TiO2 thin film/Ag nanoparticles than the In2O3/TiO2 thin film. Therefore, the use of Ag nanoparticles textured In2O3/TiO2 thin film based device is a promising approach for the forthcoming photovoltaic applications.

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“…In the past years, researchers in different disciplines used two methods, top-down and bottom-up, to fabricate and develop MNMs. Fabrication techniques consist of physical vapor deposition (conventional physical vapor deposition or glancing angle deposition) [8,9], electrochemical deposition (bipolar or template-assisted) [10], assembly [11], lithography [12], and others.…”

Section: Introductionmentioning

confidence: 99%

Review of bubble and magnetically driven catalytic micro/nanomotors: Fabrication and characterization

Khomambazari

Yusuf

Esmaeilkhanian

et al. 2022

jcc

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MNMs which consume chemical fuel and move by bubble propulsion and also have magnetic properties and can propel by applying a magnetic field. These engines can reduce the common fuel used in chemical engines by applying magnetic driving force and switching their operation in response to changing conditions. Due to continuous innovations in this field, MNMs will profoundly impact the field of Nanorobotics.

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Enhancing Detectivity of Indium-Oxide-Based Photodetectors via Vertical Nanostructuring Through Glancing Angle Deposition

Cited by 18 publications

References 48 publications

Impact of UV-ozone (UVO) treatment on optical and electrical properties of RF sputtered Ga2O3 thin films for opto-electronic application

Impact of UV-ozone (UVO) treatment on optical and electrical properties of RF sputtered Ga2O3 thin films for opto-electronic application

Silver Nanoparticles Textured Oxide Thin Films for Surface Plasmon Enhanced Photovoltaic Properties

Review of bubble and magnetically driven catalytic micro/nanomotors: Fabrication and characterization

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