Enhancing emission and conduction of light emitting capacitors by multilayered structures of silicon rich oxide

Alarcón-Salazar, J.; Zaldívar-Huerta, I. E.; Morales–Sánchez, A.; Domı́nguez, Carlos; Pedraza-Chávez, J.; Aceves-Mijares, M.

doi:10.1016/j.sna.2017.08.047

Cited by 6 publications

(8 citation statements)

References 24 publications

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“…The shape of PL spectra is quite similar to that of SRO 30 , which does not have Si-ncs [25], suggesting that, as in SRO 30 , oxygen defects in the oxide matrix due to the silicon excess are the main cause of PL emission in multilayered structures [34]. As it is reported in [37], Si-ncs are observed in SRO multilayers, and their size and density depend on the features of each layer (silicon excess, thickness, etc. ), in agreement with other reports on multilayers [27,34,38].…”

Section: Figure 5(a)supporting

confidence: 69%

“…For E < 6 MV/ cm, only TAT mechanism is presented, but once electric field overpass 6 MV/cm, impact ionization takes place, increasing substantially the EL intensity. ), which have a smaller contribution [37]. As reported in [26], SRO films with higher density of Si-ncs with size lower than 3 nm have the brighter emission.…”

Section: Figure 5(a)mentioning

confidence: 51%

“…Both LECs show two bands as well: blue and red, as PL. This indicates that PL and EL have the same origin, mainly attributed to SROrelated defects[25,34,37]. Since in this case the samples are electrically pumped, electrons are driven through deeper traps, allowing for a larger amount of radiative transitions of higher energy, such that emission in the blue band has comparable intensities to those of the red one.…”

mentioning

confidence: 87%

“…The emission in blue band is ascribed to non-bridging oxygen defects and oxygen deficiency-related centers [14,[30][31][32][33][34], whereas the red band is attributed to oxygen vacancies caused by the Si excess (720 to 740 nm) [31][32][33], as well as to interfacial defects in boundaries of silicon nanoclusters with the silicon oxide matrix (810 nm) [35][36][37]. [25,34,37]. Since in this case the samples are electrically pumped, electrons are driven through deeper traps, allowing for a larger amount of radiative transitions of higher energy, such that emission in the blue band has comparable intensities to those of the red one.…”

Section: Figure 3(a)mentioning

confidence: 99%

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Monolithically Integrable Si-Compatible Light Sources

Alarcón-Salazar¹,

Palacios-Huerta²,

González-Fernández³

et al. 2018

Recent Development in Optoelectronic Devices

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On the road to integrated optical circuits, the light emitting device is considered the bottleneck preventing us from arriving to the fully monolithic photonic system. While the development of silicon photonics keeps building momentum, the indirect bandgap nature of silicon represents a major problem for obtaining an integrated light source. Novel nanostructured materials based on silicon, such as silicon-rich oxide (SRO) containing silicon nanoparticles, present intense luminescence due to quantum phenomena. Using this material, electroluminescent devices have already been fabricated and even integrated in monolithic photonic circuits by fully complementary metal oxide semiconductor (CMOS) compatible techniques, opening the door to seamless electronic and photonic integration. The present work discusses some of the strategies used to improve the performance of SRO-based electroluminescent devices fully compatible with CMOS technology. Results from the characterization of devices obtained using different approaches are presented and compared.

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Section: Figure 5(a)supporting

confidence: 69%

Section: Figure 5(a)mentioning

confidence: 51%

mentioning

confidence: 87%

Section: Figure 3(a)mentioning

confidence: 99%

See 2 more Smart Citations

Monolithically Integrable Si-Compatible Light Sources

Alarcón-Salazar¹,

Palacios-Huerta²,

González-Fernández³

et al. 2018

Recent Development in Optoelectronic Devices

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“…Wang designed a piezoelectric jet dispenser and studied the jet performance [ 16 , 17 ]. Ahamed proposed a non-contact drop-on-demand three-layer micro droplet generator based on electrostatic actuation [ 18 ]. Lu proposed a piezoelectric impinging jet valve to investigate the effect of different structural parameters on performance [ 19 ].…”

Section: Introductionmentioning

confidence: 99%

Flow Channel Influence of a Collision-Based Piezoelectric Jetting Dispenser on Jet Performance

Zhou

Deng

et al. 2018

Sensors

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To improve the jet performance of a bi-piezoelectric jet dispenser, mathematical and simulation models were established according to the operating principle. In order to improve the accuracy and reliability of the simulation calculation, a viscosity model of the fluid was fitted to a fifth-order function with shear rate based on rheological test data, and the needle displacement model was fitted to a nine-order function with time based on real-time displacement test data. The results show that jet performance is related to the diameter of the nozzle outlet and the cone angle of the nozzle, and the impacts of the flow channel structure were confirmed. The approach of numerical simulation is confirmed by the testing results of droplet volume. It will provide a reliable simulation platform for mechanical collision-based jet dispensing and a theoretical basis for micro jet valve design and improvement.

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