Cyan-emitting phosphors are important
for near-ultraviolet (NUV)
light-emitting diodes (LEDs) to gain high-quality white lighting.
In the present work, a Bi3+-doped BaScO2F, R+ (R = Na, K, Rb) perovskite, which emits 506 nm cyan-green
light under 360 or 415 nm excitation, is obtained via a high-temperature
solid-state method for the first time. The obtained perovskite shows
improved photoluminescence and thermal stability due to the charge
compensation of Na+, K+, and Rb+ co-doping.
Its spectral broadening is attributed to two centers Bi (1) and Bi
(2), which are caused by the zone-boundary octahedral tilting due
to the substitution of Bi3+ for the larger Ba2+. Employing the blend phosphors of Ba0.998ScO2F:0.001Bi3+,0.001K+ and the commercial BAM:Eu2+, YAG:Ce3+, and CaAlSiN3:Eu2+, a full-spectrum white LED device with R
a = 96 and CCT = 4434 K was fabricated with a 360 nm NUV chip. Interestingly,
a novel strategy is proposed: the cyan-green Ba0.998ScO2F:0.001Bi3+,0.001K+ and orange Sr3SiO5:Eu2+ phosphors were packaged with
a 415 nm NUV chip to produce the white LED with R
a = 85 and CCT = 4811 K.