Enhancing nucleation density and adhesion of polycrystalline diamond films deposited by HFCVD using surface treaments on Co cemented tungsten carbide

Effect of negative dc substrate bias on morphology and adhesion of diamond coating synthesised on carbide turning tools by modified HFCVD method

“…After chemical pretreatment of the substrate to reduce the cobalt content at the surface, ion bombardment during biased nucleation stage resulted in high quality diamond. A negative bias voltage up to 300 V was applied to cobaltcemented tungsten carbide substrates [14]. The nucleation density increased from 2.7 Â 10 8 cm À2 to 0.9 Â 10 10 cm À2 for increase of bias time from 10 min to 30 min at a substrate bias voltage of À300 V. It was also observed that increasing the negative bias up to À200 V resulted in nucleation density similar to that obtained with positive bias.…”

“…The substrates principally used here were silicon. Similar work was done on WCCo substrates [13][14][15]. In almost all the works mentioned, a negative bias voltage was directly applied to the substrate through the substrate holder.…”

Enhancing the adhesion of diamond films on cobalt-cemented tungsten carbide substrate using tungsten particles via MPCVD system

“…Cemented carbides are often applied to cutting tools, rotary tools, and various wear-resistant components [1,2], while diamond films deposited on cemented carbides by CVD can significantly prolong the lifespan of tools. Unfortunately, diamond films adhere poorly to the surface of sintered cobalt-cemented tungsten carbide (WC-Co) substrates, requiring manufacturers to use cobalt as a binder.…”

Enhanced Diamond Nucleation on Cemented Carbide Cutting Tools by Employing Electrostatic Self-Assembly Seeding

“…Till now, the highest diamond nucleation density has been achieved by applying bias voltage to generate plasma over the substrate. [13][14][15][16] However, bias is not suitable for Micro-tools and tools with sharp cutting edge due to the discharge on the tip. Recent research has shown that electrostatic adsorption and self-assembly on modified substrate surface results in very high nanocrysalline particle densities by taking advantage of the electrostatic interactions between the nanocrysalline particle and silicon surface.…”