2009 IEEE International Conference on Indium Phosphide &Amp; Related Materials 2009
DOI: 10.1109/iciprm.2009.5012513
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Enhancing oscillator strength for second harmonic generation in AlGaAs/InGaAs quantum cascade lasers

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“…With control of Ga adatoms surface diffusion length and understanding that the growth kinetics are comparable for other III-V arsenic-based material, excellent material quality for the AlGaAs/(In)GaAs QCL structures is obtainable [29]. Similar MBE growth conditions are employed for simulated AlGaAs/(In)GaAs QCL structures on (111) GaAs [37].…”
Section: Qcl Growth On (111) Substratesmentioning
confidence: 99%
“…With control of Ga adatoms surface diffusion length and understanding that the growth kinetics are comparable for other III-V arsenic-based material, excellent material quality for the AlGaAs/(In)GaAs QCL structures is obtainable [29]. Similar MBE growth conditions are employed for simulated AlGaAs/(In)GaAs QCL structures on (111) GaAs [37].…”
Section: Qcl Growth On (111) Substratesmentioning
confidence: 99%