Enhancing Photodetectivity of Si/Perovskite Heterojunction-Based Broad Spectral Photodiodes by Introducing C<sub>60</sub> Hole Blocking Layer

Tang, Chenwei; Liao, Guangmeng; Song, Xinyu; Wang, X. Y.; Dai, Qinyong; Sun, Lei; Xu, Sunnan; Peng, Yingquan; Lv, Wenli; Lu, Feiping

doi:10.1109/ted.2023.3240686

IEEE Trans. Electron Devices

2023

DOI: 10.1109/ted.2023.3240686

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Enhancing Photodetectivity of Si/Perovskite Heterojunction-Based Broad Spectral Photodiodes by Introducing C₆₀ Hole Blocking Layer

Chenwei Tang

Guangmeng Liao

Xinyu Song

et al.

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2024

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Cited by 2 publications

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Ag nanoparticles at p-Si/ MAPbI3 perovskite interface: improved photo responsivity and response speed in photodetection

Wang,

Tang,

Yang

et al. 2024

Nanotechnology

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Although enhanced performances of photovoltaic devices by embedding metal nanoparticals in charge transport layer, doping into active layer bulk, decorating the active layer surface, and inserting at the interface between semiconductor and the electrode were reported, the effect of incorporating metal NPs at the interface of single crystal semiconductor and perovskite is rarely tackled. Herein the effects of incorporating Ag nanoparticals (AgNPs) at p-Si/MAPbI3 perovskite interface on the photodiode performances were investigated. The results showed that compared with reference device (without AgNPs) the photoresponsivity of the device incorporating AgNPs is greatly improved with the exception for light with wavelengths fall in the spectral range where AgNPs have strong optical absorption. This effect is extremely significant for relatively shorter wavelengths in visible region, and a maximal improvement of around 10.6 times in photoresponsivity was achieved. The physical origin of the exception for spectral range that AgNPs have strong optical absorption is the cancelation of scatter resulted enhancement through AgNPs by band-to-band absorption resulted reduction of photocurrent, in which the generated electron has energy near the fermi level and the hole has large effective mass, which relax by nonradiative recombination, thus making not contribution to the photocurrent. More importantly, the AgNP decorated device showed much faster photo response speed than reference device, and a maximal improvement of around 7.9 times in rise and fall time was achieved. These findings provide a novel approach for high responsive and high speed detection for weak light.

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Ag nanoparticles at p-Si/ MAPbI3 perovskite interface: improved photo responsivity and response speed in photodetection

Wang,

Tang,

Yang

et al. 2024

Nanotechnology

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High-quality silicon-based perovskite photodetectors with the detectivity exceeding 7.5 × 10¹³ Jones

Liu,

Wu,

Liang

et al. 2024

Opt. Express

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Considering the advantages of silicon-based microelectronic devices and the excellent photophysical properties of halide perovskites, silicon-based perovskites are expected to demonstrate great potential for application in the field of optoelectronic devices. In this paper, an antisolvent-assisted strategy is used to prepare MAPbBr3 perovskite microcrystals on silicon substrates, and dense, continuous, and smooth perovskite microcrystal thick films are further obtained after the hot-press treatment. Finally, an n-Si/perovskite thick film/carbon structure device is constructed which shows excellent photoresponsive performance with a responsivity of 11.7 A/W, a detectivity of 7.57 × 1013 Jones, and a linear dynamic range of 147 dB at 405 nm with a 0.5 V bias. Moreover, the device can respond to the light with its light intensity of as low as 2.14 × 10−6 mW cm−2, demonstrating excellent weak-light detection performance. This integration of silicon with the halide perovskites shows tremendous potential for applications in the field of semiconductor devices.

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Enhancing Photodetectivity of Si/Perovskite Heterojunction-Based Broad Spectral Photodiodes by Introducing C₆₀ Hole Blocking Layer

Cited by 2 publications

References 28 publications

Ag nanoparticles at p-Si/ MAPbI3 perovskite interface: improved photo responsivity and response speed in photodetection

Ag nanoparticles at p-Si/ MAPbI3 perovskite interface: improved photo responsivity and response speed in photodetection

High-quality silicon-based perovskite photodetectors with the detectivity exceeding 7.5 × 10¹³ Jones

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Enhancing Photodetectivity of Si/Perovskite Heterojunction-Based Broad Spectral Photodiodes by Introducing C60 Hole Blocking Layer

Cited by 2 publications

References 28 publications

Ag nanoparticles at p-Si/ MAPbI3 perovskite interface: improved photo responsivity and response speed in photodetection

Ag nanoparticles at p-Si/ MAPbI3 perovskite interface: improved photo responsivity and response speed in photodetection

High-quality silicon-based perovskite photodetectors with the detectivity exceeding 7.5 × 1013 Jones

Contact Info

Product

Resources

About

Enhancing Photodetectivity of Si/Perovskite Heterojunction-Based Broad Spectral Photodiodes by Introducing C₆₀ Hole Blocking Layer

High-quality silicon-based perovskite photodetectors with the detectivity exceeding 7.5 × 10¹³ Jones