Enhancing Photovoltaic Performance of GaAs Single-Junction Solar Cells by Applying a Spectral Conversion Layer Containing Eu-Doped and Yb/Er-Doped Phosphors

Abstract

In this study, we examined efforts to increase the photovoltaic performance of GaAs single-junction solar cells using spectral conversion layers, respectively, composed of europium-doped (Eu-doped) phosphors, ytterbium/erbium-doped (Yb/Er-doped) phosphors, and a combination of Eu-doped and Yb/Er-doped phosphors. Spin-on film deposition was used to apply the conversion layers, all of which had a total phosphor concentration of 3 wt%. The chemical compositions of the phosphors were examined by energy-dispersive X-ray spectroscopy. The fluorescence emissions of the phosphors were confirmed by using photoluminescence measurements. Under laser diode excitation at 405 nm, we observed green luminescent downshift (LDS) emissions by Eu-doped phosphors at wavelengths of 479 nm to 557 nm, and under excitation at 980 nm, we observed red up-conversion (UC) emissions by Yb/Er-doped phosphors at wavelengths of 647 nm to 672 nm. The spectral conversion layers were characterized in terms of optical reflectance, external quantum efficiency, and photovoltaic current and voltage under AM 1.5 G simulations. The conversion efficiency of the cell combining Eu-doped and Yb/Er-doped phosphors (23.84%) exceeded that of the cell coated with Yb/Er-doped phosphors (23.72%), the cell coated with Eu-doped phosphors (23.19%), and the cell coated without phosphors (22.91%).

Down‐conversion materials for organic solar cells: Progress, challenges, and perspectives

“…[93] In lanthanides, the Eu doped and Yb/Erdoped phosphors has also been studied for GaAs solar cells, and it improved the device PCE from 22.91 to 23.19%. [94]…”

An efficient and stable solar flow battery enabled by a single-junction GaAs photoelectrode

“…Compared with multijunction III–V photoelectrodes that exhibit high photovoltages (>2.0 V), the SJ-GaAs photoelectrodes feature lower photovoltages (0.9–1.1 V) but higher photocurrents (>21 mA cm −2 ) 21 , 22 , 39 . The current density–voltage ( J – V ) performance of the solid-state SJ-GaAs solar cell was then evaluated under one sun (100 mW cm −2 ) of AM 1.5 G illumination (see “Methods”), which revealed a short-circuit current density ( J SC ) of 30.73 mA cm −2 , a V OC of 0.958 V, a fill-factor (FF) of 77.32% and a resulting PCE of 22.78% (Fig.…”

Recent studies of the photovoltaic device enhancement via multifunctional luminescent down-shifting films

“…2) Eventually, the intrinsic property restrains the theoretically achievable maximum efficiency of a single-junction solar cell only to around 30%. 2,3) Especially incidence light located in the ultraviolet (UV) region is affected significantly by the inadequate spectral response of single-junction solar cells including multi-and single-crystalline Si, gallium arsenide (GaAs), cadmium telluride (CdTe) and copper indium gallium (di)selenide (CIGS), while they take up 4.62% of solar energy (AM 1.5 G). 4) Although such intrinsic restriction, there have been many approaches in two main perspectives to utilize UV photons.…”