Abstract:To enhance the photoluminescence (PL) from erbium-doped silicon, nanopillars were fabricated in a silicon-on-insulator (SOI) layer with erbium and oxygen. Photoluminescence measurements at room temperature demonstrated that a nanopillar with the diameter of 1435 nm exhibits the highest near-infrared PL from erbium atoms, which is 2.0 times higher than that from an unstructured erbium-doped SOI layer. Optical simulations revealed that the PL enhancement is mainly due to the resonance absorption of excitation li… Show more
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