Enhancing the efficiency of postetch polymer removal using megasonic wet clean for 0.13-μm dual damascene interconnect process

Chang, Chia-Pin; Foo, Tze-Cheung; Murkherjee-Roy, M.; Bliznetov, Vladimir N.; Li, H.Y.

doi:10.1016/j.tsf.2004.05.059

Cited by 9 publications

(5 citation statements)

References 3 publications

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“…High-cleaning-effi ciency ultrasonic or megasonic chemical agitation can physically crack or rupture the fragile, free-standing, high-aspect-ratio dielectric 'walls' temporarily created during damascene fabrication schemes. Reducing the aggressiveness of the bath agitation generally requires extending the immersion time to compensate for the reduced cleaning effi ciency [110].…”

Section: Compatibility Of Low-k Materials With Wet Cleaningmentioning

confidence: 99%

Integration of Low‐ k Dielectric Films in Damascene Processes

Hoofman

Nguyễn

Arnal

et al. 2007

Dielectric Films for Advanced Microelectronics

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Section: Compatibility Of Low-k Materials With Wet Cleaningmentioning

confidence: 99%

Integration of Low‐ k Dielectric Films in Damascene Processes

Hoofman

Nguyễn

Arnal

et al. 2007

Dielectric Films for Advanced Microelectronics

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“…However, they are more inconvenient with this cleaning method, such as corrosion, pattern collapse, surface damage of sensitive materials, and wetting trenches in hydrophobic materials. It was found that megasonic energy can improve the removal of particles from semiconductor devices during cleaning processes [2]- [9], provide megasonic energy that significantly improves particle removal [2]- [4], [10], [11], and develop a deeper comprehension of the transducer response in cavitation environmental and megasonic conditions [8], [12]. Thus, megasonic cleaning is increasingly popular among semiconductor manufacturers, with decreasing process times using megasonic [13].…”

Section: Introductionmentioning

confidence: 99%

Experimental Analysis of Water-1MHz-gasified with O2, and Simulation Analysis of Physicals Parameters Effect of Solvents in Megasonic Cleaning

Rhabi,

Taha,

Hmamou

et al. 2023

Int. J. Adv. Sci. Eng. Inf. Technol.

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Aqueous chemicals and solvents are used heavily in semiconductor manufacturing, and device manufacturers are focused on advancing these cleaning liquids to the next technology node. The scientific results confirm that ultrasonic agitation can improve the removal of particles. Megasonic energy has been proven to improve particle elimination in semiconductor devices in cleaning procedures. On the other hand, applied ultrasonic energy may damage the sensible devices in the cleaning process. In order to better comprehend, we explore in this paper the impact of different liquid properties by showing the transient cavitation threshold by performing some simulations with the analytical Blake model and the numerical Gilmore model. The experimental setup firstly to understand the temporal and spectral response of the increasing of the electrical power, and secondly to investigate that increasing the gas level in the cleaning bath in Water-1MHz-gasified with O_2 modifies the acoustical pressure in the medium. We can conclude that the experimental measurements and simulation studies of the applicable sound wave field and cavitation level provide an important indication of the medium's properties. By proceeding in this manner, we can find the impact parameters on the onset of transient cavitation and the safe area to treat client wafers. At this point, we can figure out the cavitation threshold that works for us and safely translate it from one chemical process to another.

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“…In the case of cleaning of patterned wafers, the megasonic field provides an oscillating acoustic pressure that is known to enhance mass diffusion and convection in the trench. High power densities, however, limit the use of megasonic cleaning in patterned wafers due to the significant level of damage of the patterned structures [7][8][9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Damage-free Design of Megasonic Waveguide for Single Wafer Process

Ahn¹,

Yu²,

Yang³

et al. 2009

ECS Trans.

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Megasonic cleaning process is routinely used in the semiconductor industry for removal of contaminant particles from wafer surfaces. Effective cleaning is achieved through proper choice of chemical solutions, transducer power density and frequency of the acoustic field. Two principal mechanisms, namely acoustic streaming and acoustic cavitation, are considered to be responsible for the removal of particles from a contaminated surface. In this study, we designed two megasonic waveguides, indirect type and direct type, for a comparative study of cleaning wafers with 70 nm poly-Si pattern. We observed that the indirect type waveguide has more uniform megasonic energy which is transferred to the wafer. Also bubble size was smaller than conventional direct type. The conventional direct type waveguide is better in energy transfer, but can cause structural damages on the wafer.

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Enhancing the efficiency of postetch polymer removal using megasonic wet clean for 0.13-μm dual damascene interconnect process

Cited by 9 publications

References 3 publications

Integration of Low‐ k Dielectric Films in Damascene Processes

Integration of Low‐ k Dielectric Films in Damascene Processes

Experimental Analysis of Water-1MHz-gasified with O2, and Simulation Analysis of Physicals Parameters Effect of Solvents in Megasonic Cleaning

Damage-free Design of Megasonic Waveguide for Single Wafer Process

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