The path to realizing low cost, stable, and earth-abundant photoelectrodes can be enabled through a detailed understanding of the optoelectronic properties of these materials, by combining theory and experimental techniques. Of the limited set of oxide photocathode materials currently available, CuFeO 2 has emerged as a promising candidate warranting detailed attention. In this work, highly compact thin films of rhombohedral (3R) CuFeO 2 were prepared via reactive co-sputtering. Despite its 1.43 eV indirect bandgap, a cathodic photocurrent of 0.85 mA/cm 2 was obtained at 0.4 V vs. RHE in the presence of sacrificial electron acceptor. This unexpected performance was related with inefficient bulk charge separation due to the ultrafast (< 1 ps) self-trapping of photogenerated free carriers. The electronic structure of 3R-CuFeO 2 was elucidated through a combination of optical and X-ray spectroscopic techniques and further complemented by first principles computational methods, including the many-body approach for computing the O K-edge X-ray absorption spectrum. Through resonant inelastic X-ray scattering (RIXS) spectroscopy, the visible absorption edges of CuFeO 2 were found to correspond to Cu à Fe metal-to-metal charge transfer, which exhibits a high propensity toward self-trapping. Findings of the present work enable us to understand the performance bottlenecks of CuFeO 2 photocathodes and suggest feasible strategies for improving material limitations.