Enhancing the Light Extraction of (Al$_{x}$Ga$_{1 - x}$)$_{0.5}$In$_{0.5}$P-Based Light-Emitting Diode Fabricated via Geometric Sapphire Shaping

Lee, Yea-Chen; Lee, Chia-En; Kuo, Hao‐Chung; Lu, Tien−Chang; Wang, Shing-Chung

doi:10.1109/lpt.2008.916905

Cited by 12 publications

(5 citation statements)

References 10 publications

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“…This total internal reflection problem can usually be solved by roughening the surfaces/interfaces of LEDs. [15][16][17] As shown in Fig. 3d, the cone-shaped interfaces of MPSS not only reflected the downward photons, but also redirected the photons which were originally emitted out of the escape cone, back into the escape cone.…”

Section: Resultsmentioning

confidence: 96%

Crystal Quality and Light Output Power of GaN-Based LEDs Grown on Nanoporous Patterned Sapphire Substrate

Chen

Yap

Hsu

et al. 2014

ECS Solid State Letters

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The crystal quality and light output power of GaN-based LEDs grown on nanoporous patterned sapphire substrate (NPSS) were investigated. NPSS was prepared using an anodized aluminum oxide (AAO) layer. It was found that the crystal quality of GaN-based LEDs grown on NPSS was better than that on micron-sized patterned sapphire substrate (MPSS) and conventional sapphire substrate. However, the light output power of GaN-based LEDs grown on NPSS was smaller than that on MPSS because the light extraction efficiency (LEE) of MPSS was much larger than that of NPSS.

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Section: Resultsmentioning

confidence: 96%

Crystal Quality and Light Output Power of GaN-Based LEDs Grown on Nanoporous Patterned Sapphire Substrate

Chen

Yap

Hsu

et al. 2014

ECS Solid State Letters

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“…As shown in Fig. 5a, the LEE of AlGaInP VI-LEDs without the nanopillars is limited by the large difference in refractive index between the n-AlGaInP ( n ∼ 2.9) and air ( n = 1.0), resulting in a small critical angle of ~20° for the total internal reflection from a flat surface according to Snell’s law, followed by only 11 % extraction of input power [15]. On the other hand, as shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

Vertical-Injection AlGaInP LEDs with n-AlGaInP Nanopillars Fabricated by Self-Assembled ITO-Based Nanodots

Ryu

Park

et al. 2015

Nanoscale Res Lett

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The light output power of AlGaInP-based vertical-injection light-emitting diodes (VI-LEDs) can be enhanced significantly using n-AlGaInP nanopillars. n-AlGaInP nanopillars, ~200 nm in diameter, were produced using SiO2 nanopillars as an etching mask, which were fabricated from self-assembled tin-doped indium oxide (ITO)-based nanodots formed by the wet etching of as-deposited ITO films. The AlGaInP-based VI-LEDs with the n-AlGaInP nanopillars provided 25 % light output power enhancement compared to VI-LEDs with a surface-roughened n-AlGaInP because of the reduced total internal reflection by the nanopillars at the n-AlGaInP/air interface with a large refractive index difference of 1.9.

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“…films which have transparent, electric conductivity, and lower refractive index properties were deposited on surface [9], [10]. The absorbing GaAs substrate was substituted by a transparent substrate of sapphire which has a geometric shaping sidewall via glue bonding and chemical etching [11], [12]. Since the devices substrate in this structure is transparent, the output light is all directions including chip sidewall and surface.…”

Section: T He High-efficiency Light-emitting Diodes (Leds)mentioning

confidence: 99%

Enhanced Light Extraction in Wafer-Bonded AlGaInP-Based Light-Emitting Diodes via Micro- and Nanoscale Surface Textured

Lee

Kuo

Cheng

et al. 2009

IEEE Electron Device Lett.

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AlGaInP-based metal-bonding light-emitting diodes (LEDs) with micro-and nanoscale textured surface were investigated. The device surface with microbowls and nanorods were formed by a chemical wet-etching and dry-etching technique for enhancing light-extraction purpose. The luminous intensity could be enhanced 65.8% under 20-mA current injection as compared with the plane surface LEDs. The maximum wall-plug efficiency was achieved 14.1% at 7.5-mA operation.

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Enhancing the Light Extraction of (Al$_{x}$Ga$_{1 - x}$)$_{0.5}$In$_{0.5}$P-Based Light-Emitting Diode Fabricated via Geometric Sapphire Shaping

Cited by 12 publications

References 10 publications

Crystal Quality and Light Output Power of GaN-Based LEDs Grown on Nanoporous Patterned Sapphire Substrate

Crystal Quality and Light Output Power of GaN-Based LEDs Grown on Nanoporous Patterned Sapphire Substrate

Vertical-Injection AlGaInP LEDs with n-AlGaInP Nanopillars Fabricated by Self-Assembled ITO-Based Nanodots

Enhanced Light Extraction in Wafer-Bonded AlGaInP-Based Light-Emitting Diodes via Micro- and Nanoscale Surface Textured

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