Enhancing the magnetism of 2D carbide MXene Ti3C2Tx by H2 annealing

Magnetic phase transition from paramagnetic in Nb2AlC-MAX to superconductivity-like diamagnetic in Nb2C-MXene: an experimental and computational analysis

“…68 Zhang et al have reported the paramagnetic nature of as-prepared Ti 3 C 2 and its magnetic variation on different synthesis conditions. 69 Akgenc et al theoretically pointed out the ferromagnetic half-metal and antiferromagnetic semiconductor nature of Ti 2 C MXene. 70 Since the magnetic behavior of 2D nanostructures could be intrinsic or defectinduced, the wet chemical etching route could produce 2D sheets with intrinsic magnetic properties with high-yield and lowcost mass production.…”

The tunable electric and magnetic properties of 2D MXenes and their potential applications

“…It is suggested that the defects formation process in MXenes respond quite differently than other 2D lightweight material due to its complex structure. 84 . The Ti 3 C 2 T x showed the very weak paramagnetism while H 2 annealing improve the saturation magnetization even-though ferromagnetism was observed after annealing at 500 o C as shown in Figure 5 (a-d).…”

Tuning 2D MXenes by Surface Controlling and Interlayer Engineering: Methods, Properties, and Synchrotron Radiation Characterizations

“…Recently, Tang and co‐workers reported the research of saturation magnetization enhancement of Ti 3 C 2 T x via Ti–C vacancy production under annealing in H 2 . [ 53 ] It was found that oxygen content in Ti 3 C 2 T x remained the same level after annealing in H 2 under 100 to 500 °C, but the functional groups trended to transform from CTiOH to CTiO and OTiO. Most importantly, there were Ti and C vacancy together with TiC vacancy formed during the annealing process (Figure 4b‐i).…”

“…Reproduced with permission. [ 53 ] Copyright 2019, Elsevier. c) Li + storage capacity of V 2 CT x influenced by F and OH, i) side view of V 2 CLi 6 , ii) top view of V 2 CLi 6 , iii) I‐V 2 CF 2 Li, and iv) I‐V 2 C(OH) 2 Li 1.5 ; “I” stands for the type of F or OH groups are located above the hollow sites formed by three neighboring C atoms on both sides of V 2 C monolayer.…”