Enhancing the optoelectronic properties of V2O5 thin films through Tb doping for photodetector applications

Altowyan, Abeer S.; Hakami, Jabir; Algarni, H.; Shkir, Mohd.

doi:10.1016/j.jallcom.2023.170911

Cited by 18 publications

(1 citation statement)

References 46 publications

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“…In addition, 2D materials have excellent optoelectronic properties, allowing them to show potential in optoelectronic devices. − The band gap tunability and the ability to absorb light over a wide wavelength range make them ideal substrates for photodetectors, light modulators, and light emitting devices. The fast response time, high sensitivity, and broad band properties of these devices in range from visible to infrared light make them promising for applications in communications, photonic computing, and sensing.…”

Section: Introductionmentioning

confidence: 99%

First-Principles Studies of Strain-Adjustable Janus WSSe Monolayer/g-GeC Monolayer Heterojunctions: Implications for Photoelectric and Switching Devices

Yu,

Liu,

Luo

et al. 2023

ACS Appl. Nano Mater.

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Two-dimensional heterojunction materials show great potential for a wide range of applications with their tunable properties, such as versatility and low-dimensional confinement effects. The electronic structure, transport, and optical properties of Janus WSSe/g-GeC heterojunctions are investigated in-depth using density functional theory combined with a nonequilibrium Green's function approach. The results show that the electronic properties of Janus WSSe/g-GeC heterojunction materials can be effectively tuned by applying vertical and biaxial strain. In particular, when a biaxial strain of ±10% is applied, it can transform the heterojunction from semiconductor properties to metallic properties. In addition, we found that a Janus WSSe/g-GeC heterojunction exhibits excellent optical properties with a strong absorption peak in the visible region. In this heterojunction-based PIN junction, considerable photocurrents are generated in the visible range, especially in the region of 1.7 to 3.1 eV, where significant photocurrent density peaks appear, and the vertical strain can effectively modulate the photocurrent density peaks. In addition, a Janus WSSe/g-GeC heterojunction-based device exhibits excellent performance with a high current switching ratio of 10 11 at the biaxial strain of ±10%, showing perfect diode behavior. In summary, by tuning the applied strain, its electronic properties can be effectively tuned and exhibit excellent optical response. Janus WSSe/g-GeC heterojunction materials have great potential for optoelectronic and switching devices. These findings provide important references and guidance for further development of practical applications based on WSSe/g-GeC heterojunctions.

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Section: Introductionmentioning

confidence: 99%

First-Principles Studies of Strain-Adjustable Janus WSSe Monolayer/g-GeC Monolayer Heterojunctions: Implications for Photoelectric and Switching Devices

Yu,

Liu,

Luo

et al. 2023

ACS Appl. Nano Mater.

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Visible-light optical limiting of vanadia–polyvinylpyrrolidone nanofibers

Pepe,

Tutel,

Akkoyun

et al. 2024

J Mater Sci

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In this work, vanadium pentoxide (V2O5) nanoparticles-filled electrospun polyvinylpyrrolidone (PVP) nanofibers were investigated systematically at various nanofiller weight percentages (8 and 10 wt%) and input intensities to reveal the effective optical limiting feature in the visible spectrum. XRD analysis demonstrated the purity of the produced V2O5 nanoparticles. According to SEM findings, V2O5 nanoparticles were effectively integrated into the PVP nanofibers. Two distinct absorption bands were observed at around 400 and 217 nm. These bands were related to PVP and V2O5 nanoparticles in linear absorption measurements, respectively. Moreover, an increased Urbach energy value was obtained with an increase in V2O5 nanofiller content within PVP. Open-aperture Z-scan measurements were taken at 532 nm considering the band gap energy of the V2O5 nanofillers in PVP composite nanofibers. In 8 wt% V2O5 nanofilled PVP nanofibers, one-photon absorption (OPA) was the main nonlinear absorption (NA) mechanism, and the defect states of the V2O5 nanoparticles had no contribution to NA. On the other hand, sequential two-photon absorption was the main NA mechanism, and the defect states of the nanoparticles caused more efficient NA behavior in 10 wt% V2O5 nanofilled PVP nanofibers. The effective optical limiting behavior was obtained for this composite nanofiber with lower limiting threshold as 1.49 × 10–5 J/cm2. The V2O5 nanofilled PVP nanofibers presented strong potential optical limiters in the visible wavelength region. This was attributed to their high linear transmittance at low input intensities and their robust NA behavior at higher input intensities.

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Electrical, structural, morphological and photovoltaic properties of Au/n-Ge heterojunctions using V2O5 interfacial layer

Henry Thomas,

Ashok Kumar,

Kaleemulla

et al. 2024

J Mater Sci: Mater Electron

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Enhancing the optoelectronic properties of V2O5 thin films through Tb doping for photodetector applications

Cited by 18 publications

References 46 publications

First-Principles Studies of Strain-Adjustable Janus WSSe Monolayer/g-GeC Monolayer Heterojunctions: Implications for Photoelectric and Switching Devices

First-Principles Studies of Strain-Adjustable Janus WSSe Monolayer/g-GeC Monolayer Heterojunctions: Implications for Photoelectric and Switching Devices

Visible-light optical limiting of vanadia–polyvinylpyrrolidone nanofibers

Electrical, structural, morphological and photovoltaic properties of Au/n-Ge heterojunctions using V2O5 interfacial layer

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