2024
DOI: 10.1039/d3tc03540a
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Enhancing the optoelectronic properties of solution-processed AgInSe2 thin films for application in photovoltaics

Shubhanshu Agarwal,
Kyle Weideman,
David Rokke
et al.

Abstract: A solution-processed AgInSe2 film from dimethyl formamide–thiourea–chlorides chemistry with a high carrier lifetime of 9.2 ns and a PLQY of 0.0128% is reported.

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Cited by 6 publications
(1 citation statement)
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“…40 At the extreme of fully Ag-substituted AgInSe 2 , excellent optoelectronic properties have been observed but changes in carrier concentration require a new device architecture before high efficiency devices can be obtained. 89…”
Section: Approaches For Solution Processing: Cu(inga)(sse)2 As a Mode...mentioning
confidence: 99%
“…40 At the extreme of fully Ag-substituted AgInSe 2 , excellent optoelectronic properties have been observed but changes in carrier concentration require a new device architecture before high efficiency devices can be obtained. 89…”
Section: Approaches For Solution Processing: Cu(inga)(sse)2 As a Mode...mentioning
confidence: 99%