Enhancing the Perfection of a Silicon Crystal Doped with Nickel and Zinc Impurities

Abstract

This research paper presents the findings of an investigation into the interaction between zinc (Zn) and nickel (Ni) impurity atoms within a silicon (Si) matrix, which were doped sequentially in various combinations. The characterization techniques employed for this study encompass X-ray diffraction and IR-Fourier spectrometry. It is noteworthy that the degree of crystallinity exhibited by the silicon lattice, subject to the introduction of Zn and Ni impurities, is contingent upon the methodology employed for impurity incorporation. The results of this study reveal a distinctive trend in the optical properties of these doped silicon samples. Specifically, upon the introduction of Zn atoms into silicon that was pre-doped with Ni (Si<Ni, Zn>), there is a concomitant reduction in the concentration of optically active oxygen atoms. Remarkably, this alteration in the dopant composition leads to a marked enhancement in the transparency of the silicon crystal. In stark contrast, when the doping sequence is reversed (Si<Ni, Zn> Ni>), an opposing effect is observed, resulting in a diminishment of crystal transparency. These findings underscore the intricate interplay between the introduced impurity atoms, the dopant sequence, and their collective impact on the optical properties of the silicon matrix. Such insights contribute to our comprehension of the nuanced behavior of doped silicon and have implications for applications requiring tailored optical characteristics in semiconductor materials.

Influence of Doping Conditions on the Properties of Nickel Atom Clusters

“…By studying the various external influences and comparing the works of other authors, we made a conclusion that the sensitivity of the resulting samples demonstrates hundred times more magnitude to radial pressure in compare to results demonstrated by other authors [13][14][15][16][17][18][19][20][21]. And they demonstrate the results that met the parameters we needed.…”

“…Based on the above, it can be assumed that the experimentally observed non-monotonicity of the dependences ρ=f(P) is a consequence of two conflicting processes: the first is a decrease in the band gap and the associated change in the ionization energy of deep Ni levels, which leads to an increase in conductivity and the second is the decay of precipitates impurities with an increase in the concentration of electrically active centers, which, under the influence of pressure, are displaced from the volume of the semiconductor and change the spectrum of the surface charge distribution at the metal-semiconductor interface. Mechanical stresses that stimulate the gettering of defects from the bulk of the semiconductor, or impurities localized in the metal-semiconductor transition layer and interacting with surface states, may be responsible for changes in the properties of the interface under the influence of pressure [15,16]. All these features show very interesting new functionalities of silicon with clusters of nickel atoms.…”